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1. (WO2005064692) COMPOUND SEMICONDUCTOR FILM, SOLAR CELL, AND METHODS FOR PRODUCING THOSE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2005/064692 International Application No.: PCT/JP2004/017756
Publication Date: 14.07.2005 International Filing Date: 30.11.2004
IPC:
H01L 31/0336 (2006.01) ,H01L 31/0749 (2012.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0256
characterised by the material
0264
Inorganic materials
0328
including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272-H01L31/032174
0336
in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of the sixth group of the Periodic System
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
06
characterised by at least one potential-jump barrier or surface barrier
072
the potential barriers being only of the PN heterojunction type
0749
including a AIBIIICVI compound, e.g. CdS/CuInSe2 [CIS] heterojunction solar cells
Applicants: HASHIMOTO, Yasuhiro; null (UsOnly)
SATOH, Takuya; null (UsOnly)
NEGAMI, Takayuki; null (UsOnly)
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.[JP/JP]; 1006, Oaza Kadoma Kadoma-shi, Osaka 5718501, JP (AllExceptUS)
Inventors: HASHIMOTO, Yasuhiro; null
SATOH, Takuya; null
NEGAMI, Takayuki; null
Agent: IKEUCHI SATO & PARTNER PATENT ATTORNEYS; 26th Floor, OAP Tower 8-30, Tenmabashi 1-chome Kita-ku, Osaka-shi Osaka 5306026, JP
Priority Data:
2003-40777605.12.2003JP
Title (EN) COMPOUND SEMICONDUCTOR FILM, SOLAR CELL, AND METHODS FOR PRODUCING THOSE
(FR) COUCHE SEMI-CONDUCTRICE COMPOSITE, CELLULE SOLAIRE, ET PROCEDE PERMETTANT DE PRODUIRE CEUX-CI
(JA) 化合物半導体膜及び太陽電池とそれらの製造方法
Abstract:
(EN) A compound semiconductor film (14) is composed of a compound containing (A) at least one element selected from zinc, tin, cadmium, indium and gallium, (B) at least one element selected from oxygen and sulfur and (C) a group IIa element. A solar cell comprises a substrate (11), a conductive layer (12) formed on the substrate (11), a light-absorbing layer (13) which is formed on the conductive layer (12) and composed of a compound semiconductor containing a group Ib element, a group IIIa element and a group VIa element, the above-described compound semiconductor film (14) formed on the light-absorbing layer (13), and a transparent conductive layer (16) formed on the compound semiconductor layer (14). By having the above-described constitution, a compound semiconductor film can have a low electrical resistivity. By using such a compound semiconductor film with low electrical resistivity as a buffer layer of a solar cell, the solar cell can be improved in the energy conversion efficiency.
(FR) L'invention concerne une couche (14) semi-conductrice composite, formée d'un matériau composite contenant (A) au moins un élément choisi parmi le zinc, l'étain, le cadmium, l'indium et le gallium, (B) au moins un élément choisi entre l'oxygène, et le soufre, et (C) un élément du groupe IIa. L'invention concerne en outre une cellule solaire comprenant un substrat (11), une couche conductrice (12) formée sur le substrat (11), une couche (13) d'absorption de lumière formée sur la couche conductrice (12) et composée matériau semi-conducteur composite contenant un élément du groupe Ib, un élément du groupe IIIa, et un élément du groupe VIa, la couche semi-conductrice (14) décrite ci-dessus, formée sur la couche (13) d'absorption de lumière, et une couche conductrice (16) transparente formée sur la couche semi-conductrice (14) composite. La composition décrite permet d'obtenir une couche semi-conductrice composite présentant une faible résistivité électrique, laquelle permet d'améliorer le rendement photosynthétique d'une cellule solaire lorsqu'elle est utilisée en tant que couche tampon dans cette dernière.
(JA)  化合物半導体膜を、A.亜鉛、スズ、カドミウム、インジウム及びガリウムから選ばれる少なくとも一つの元素、B.酸素及び硫黄から選ばれる少なくとも一つの元素、及びC.IIa族元素を含有する化合物で構成する。また、太陽電池を、基板(11)と、基板(11)上に形成された導電層(12)と、導電層(12)上に形成されたIb族元素、IIIa族元素及びVIa族元素を含有する化合物半導体からなる光吸収層(13)と、光吸収層(13)上に形成された前記化合物半導体膜(14)と、化合物半導体膜(14)上に形成された透明導電層(16)とを含む構成とする。これにより、電気抵抗率の低い化合物半導体膜を提供する。また、電気抵抗率の低い化合物半導体膜を太陽電池のバッファー層として用いて、太陽電池のエネルギー変換効率を向上させる。
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)