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1. WO2005064680 - SEMICONDUCTOR DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

Publication Number WO/2005/064680
Publication Date 14.07.2005
International Application No. PCT/JP2003/016782
International Filing Date 25.12.2003
IPC
H01L 21/8238 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8238Complementary field-effect transistors, e.g. CMOS
CPC
H01L 21/823807
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
8238Complementary field-effect transistors, e.g. CMOS
823807with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
H01L 21/823828
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
8238Complementary field-effect transistors, e.g. CMOS
823828with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
H01L 29/045
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
04characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
045by their particular orientation of crystalline planes
H01L 29/7842
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
7842means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
H01L 29/7843
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
7842means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
7843the means being an applied insulating layer
Applicants
  • FUJITSU LIMITED [JP]/[JP] (AllExceptUS)
  • TAKAO, Yoshihiro [JP]/[JP] (UsOnly)
Inventors
  • TAKAO, Yoshihiro
Agents
  • ITOH, Tadahiko
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
(FR) DISPOSITIF A SEMI-CONDUCTEUR ET DISPOSITIF A CIRCUIT INTEGRE A SEMI-CONDUCTEUR
(JA) 半導体装置および半導体集積回路装置
Abstract
(EN)
Each of a p-channel MOS transistor and an n-channel MOS transistor is set with a channel direction of <100>, a first stress compensation film storing tensile stress is formed in an STI type isolation structure and a second stress compensation film storing tensile stress is formed on a silicon substrate so as to cover the element isolation structure.
(FR)
Selon la présente invention, à la fois un transistor MOS à canal p et un transistor MOS à canal n sont réglés avec une direction de canal de <100>, un premier film de compensation de contrainte qui emmagasine la contrainte de traction est formé dans une structure d'isolation de type STI et un second film de compensation de contrainte qui emmagasine la contrainte de traction est formé sur un substrat de silicium de manière à couvrir la structure d'isolation de l'élément.
(JA)
pチャネルMOSトランジスタおよびnチャネルMOSトランジスタの各々においてチャネル方向を<100>方向に設定し、STI型素子分離構造に、引っ張り応力を蓄積した第1の応力補償膜を形成し、さらにシリコン基板上に素子分離構造を覆うように引っ張り応力を蓄積した第2の応力補償膜を形成する。
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