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Machine translation
1. (WO2005064670) A PEDESTAL FOR AN ETCH PROCESSING APPARATUS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/064670    International Application No.:    PCT/US2004/042471
Publication Date: 14.07.2005 International Filing Date: 16.12.2004
IPC:
C23C 16/458 (2006.01), H01L 21/00 (2006.01), H01L 21/687 (2006.01)
Applicants: APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue, Santa Clara, CA 95054 (US) (For All Designated States Except US).
SATITPUNWAYCHA, Peter [US/US]; (US) (For US Only).
NGUYEN, Khiem [US/US]; (US) (For US Only).
MAK, Alfred W. [US/US]; (US) (For US Only).
COLLINS, Kenneth S. [US/US]; (US) (For US Only).
SAHIN, Turgut [US/US]; (US) (For US Only)
Inventors: SATITPUNWAYCHA, Peter; (US).
NGUYEN, Khiem; (US).
MAK, Alfred W.; (US).
COLLINS, Kenneth S.; (US).
SAHIN, Turgut; (US)
Agent: PATTERSON, B. Todd; MOSER, PATTERSON & SHERIDAN LLP, 3040 Post Oak Blvd., Suite 1500, Houston, TX 77056 (US)
Priority Data:
60/531,062 19.12.2003 US
10/782,300 18.02.2004 US
Title (EN) A PEDESTAL FOR AN ETCH PROCESSING APPARATUS
(FR) PLATEAU POUR APPAREIL DE TRAITEMENT PAR ATTAQUE CHIMIQUE
Abstract: front page image
(EN)The present invention generally provides an improved pedestal for supporting a substrate. The pedestal has greatest application during a plasma etching process, such as for a quartz photomask, or 'reticle.' The pedestal defines a body, and a substrate support base along an upper surface of the body. The substrate support base has an outer edge, and an intermediate substrate support ridge for receiving and supporting the substrate. At least a portion of the substrate support base outside of the intermediate substrate support ridge is fabricated from a dielectric material. The purpose is to couple greater RF power through the reticle in order to enhance the plasma etching process.
(FR)La présente invention concerne généralement un modèle amélioré de plateau support pour substrat. Ce plateau convient particulièrement au traitement par attaque chimique au plasma, notamment dans le cas d'un photomasque pour quartz ou réticule. Ce plateau définit un corps, et une base support à substrat le long de la surface supérieure du corps. Cette base support à substrat présente un bord extérieur, et une bordure intermédiaire de support à substrat permettant d'accueillir le substrat et de lui servir de support. Une partie au moins de la base support à substrat, à l'extérieur de la bordure intermédiaire, est faite en un matériau diélectrique. Cela vise à coupler une plus grande énergie haute fréquence au travers du réticule de façon à renforcer le traitement d'attaque chimique au plasma.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)