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Machine translation
1. (WO2005064644) STRAINED SILICON MOSFETS HAVING REDUCED DIFFUSION OF N-TYPE DOPANTS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/064644    International Application No.:    PCT/US2004/028593
Publication Date: 14.07.2005 International Filing Date: 01.09.2004
Chapter 2 Demand Filed:    05.04.2005    
IPC:
H01L 21/265 (2006.01), H01L 21/268 (2006.01), H01L 21/336 (2006.01), H01L 29/10 (2006.01)
Applicants: ADVANCED MICRO DEVICES, INC. [US/US]; One AMD Place, Mail Stop 68, Sunnyvale, CA 94088-3453 (US) (For All Designated States Except US).
XIANG, Qi [CN/US]; (US) (For US Only)
Inventors: XIANG, Qi; (US)
Agent: COLLOPY, Daniel, R.; One AMD Place, Mail Stop 68, P.O. Box 3453, Sunnyvale, CA 94088-3453 (US).
WRIGHT, Hugh, R.; Brookes Batchellor LLP, 102-108 Clerkenwell Road, London EC1M 5SA (GB)
Priority Data:
10/658,611 09.09.2003 US
Title (EN) STRAINED SILICON MOSFETS HAVING REDUCED DIFFUSION OF N-TYPE DOPANTS
(FR) MOSFETS A SILICIUM CONTRAINT A DIFFUSION REDUITE DES DOPANTS DE TYPE N
Abstract: front page image
(EN)Processing is performed during fabrication of a strained silicon NMOS device to create point defects in silicon germanium (40) portions of source regions, and optionally of drain regions, prior to activation of source and drain region dopants. The point defects retard diffusion of the n-type dopants in the silicon germanium material (40), effectively lengthening the duration of the diffusivity transient region and resulting in lower overall dopant diffusivity during activation.
(FR)On effectue pendant la fabrication de NMOS à silicium contraint un traitement créant des défauts ponctuels dans les parties de silicium germanium (40) des régions source, et facultativement des régions drain, avant d'activer les dopants desdites régions. Les défauts ponctuels retardent la diffusion des dopants de type n dans le silicium germanium (40) et allongent notablement la durée de la région du transitoire de diffusibilité, d'où une diffusibilité générale moindre du dopant pendant l'activation.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)