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1. WO2005062752 - METAL CARBIDE GATE STRUCTURE AND METHOD OF FABRICATION

Publication Number WO/2005/062752
Publication Date 14.07.2005
International Application No. PCT/US2004/039855
International Filing Date 29.11.2004
Chapter 2 Demand Filed 21.10.2005
IPC
H01L 21/8238 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8238Complementary field-effect transistors, e.g. CMOS
H01L 29/76 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
CPC
H01L 21/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H01L 21/823842
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
8238Complementary field-effect transistors, e.g. CMOS
823828with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
823842gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
H01L 29/4966
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
43characterised by the materials of which they are formed
49Metal-insulator-semiconductor electrodes, ; e.g. gates of MOSFET
4966the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
Applicants
  • INTERNATIONAL BUSINESS MACHINES CORPORATION [US]/[US] (AllExceptUS)
  • CABRAL, Cyril, Jr. [US]/[US] (UsOnly)
  • DETAVERNIER, Christopher [BE]/[BE] (UsOnly)
  • JAMMY, Rajarao [IN]/[US] (UsOnly)
  • SAENGER, Katherine, L. [US]/[US] (UsOnly)
Inventors
  • CABRAL, Cyril, Jr.
  • DETAVERNIER, Christopher
  • JAMMY, Rajarao
  • SAENGER, Katherine, L.
Agents
  • AMERNICK, Burton, A.
Priority Data
10/722,55728.11.2003US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) METAL CARBIDE GATE STRUCTURE AND METHOD OF FABRICATION
(FR) STRUCTURE DE GRILLE DE CARBURE METALLIQUE ET PROCEDE DE FABRICATION
Abstract
(EN) A semiconductor device such as a complementary metal oxide semiconductor (CMOS) comprising at least one FET (210) that comprises a gate electrode (180) comprising a metal carbide and method of fabrication are provided. The CMOS comprises dual work function metal gate electrodes whereby the dual work functions are provided by a metal (150) and a carbide of a metal.
(FR) L'invention concerne un dispositif semi-conducteur, tel qu'un semi-conducteur à oxyde de métal complémentaire (CMOS), comprenant au moins un FET comportant une électrode de grille à base de carbure métallique. Le CMOS comprend des électrodes de grille métalliques à double fonction, la double fonction étant fournie par un métal et un carbure d'un métal.
Latest bibliographic data on file with the International Bureau