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1. WO2005062310 - FLASH MEMORY DEVICE

Publication Number WO/2005/062310
Publication Date 07.07.2005
International Application No. PCT/US2004/035482
International Filing Date 26.10.2004
Chapter 2 Demand Filed 28.09.2005
IPC
G11C 16/04 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
04using variable threshold transistors, e.g. FAMOS
CPC
H01L 27/115
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
H01L 27/11556
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517with floating gate
11551characterised by three-dimensional arrangements, e.g. with cells on different height levels
11553with source and drain on different levels, e.g. with sloping channels
11556the channels comprising vertical portions, e.g. U-shaped channels
H01L 29/40114
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
401Multistep manufacturing processes
4011for data storage electrodes
40114the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
H01L 29/785
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
785having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Applicants
  • ADVANCED MICRO DEVICES, INC. [US]/[US] (AllExceptUS)
  • HILL, Wiley, Eugene [US]/[US] (UsOnly)
  • WANG, Haihong [CN]/[US] (UsOnly)
  • WU, Yider [CN]/[US] (UsOnly)
  • YU, Bin [CN]/[US] (UsOnly)
Inventors
  • HILL, Wiley, Eugene
  • WANG, Haihong
  • WU, Yider
  • YU, Bin
Agents
  • DRAKE, Paul, S.
  • WRIGHT Hugh R.
Priority Data
10/726,50804.12.2003US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) FLASH MEMORY DEVICE
(FR) DISPOSITIF DE MEMOIRE FLASH
Abstract
(EN)
A memory device (100) includes a conductive structure (210), a number of dielectric layers (410­430) and a control gate (510). The dielectric layers (410-430) are formed around the conductive structure (210) and the control gate (510) is formed over the dielectric layers (410-430). A portion of the conductive structure (210) functions as a drain region (1005) for the memory device (100) and at least one of the dielectric layers (410-430) functions as a charge storage structure for the memory device (100). The dielectric layers (410-430) may include oxide-nitride-oxide layers.
(FR)
L'invention concerne un dispositif de mémoire (100) qui comprend un structure conductrice (210), un certain nombre de couches diélectriques (410-430) et une grille de commande (510). Les couches diélectriques (410-430) sont formées autour de la structure conductrice (210) et la grille de commande (510) est formée sur les couches diélectriques (410-430). Une partie de la structure conductrice (210) fonctionne en tant que région drain (1005) pour le dispositif de mémoire (100) et au moins une des couches diélectriques (410-430) fonctionne en tant que structure de stockage de charge pour le dispositif de mémoire (100). Les couches diélectriques (410-430) peuvent comprendre des couches oxyde-nitrure-oxyde.
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