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Machine translation
1. (WO2005060689) EMI-EMC SHIELD FOR SILICON-BASED OPTICAL TRANSCEIVER
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/060689    International Application No.:    PCT/US2004/042741
Publication Date: 07.07.2005 International Filing Date: 17.12.2004
IPC:
G02B 6/42 (2006.01), G02B 6/12 (2006.01)
Applicants: SIOPTICAL, INC. [US/US]; 7540 Windsor Drive, Lower Level, Allentown, PA 18195 (US) (For All Designated States Except US).
PIEDE, David [US/US]; (US) (For US Only).
GHIRON, Margaret [US/US]; (US) (For US Only).
GOTHOSKAR, Prakash [IN/US]; (US) (For US Only).
MONTGOMERY, Robert, Keith [US/US]; (US) (For US Only).
PATEL, Vipulkumar [US/US]; (US) (For US Only).
SHASTRI, Kalpendu [US/US]; (US) (For US Only).
PATHAK, Soham [US/US]; (US) (For US Only).
YANUSHEFSKI, Katherine, A. [US/US]; (US) (For US Only)
Inventors: PIEDE, David; (US).
GHIRON, Margaret; (US).
GOTHOSKAR, Prakash; (US).
MONTGOMERY, Robert, Keith; (US).
PATEL, Vipulkumar; (US).
SHASTRI, Kalpendu; (US).
PATHAK, Soham; (US).
YANUSHEFSKI, Katherine, A.; (US)
Agent: KOBA, Wendy, W.; P.O. Box 556, Springtown, PA 18081 (US)
Priority Data:
60/530,520 18.12.2003 US
11/013,722 16.12.2004 US
Title (EN) EMI-EMC SHIELD FOR SILICON-BASED OPTICAL TRANSCEIVER
(FR) PROTECTION EMI-EMC POUR EMETTEUR-RECEPTEUR OPTIQUE UTILISANT DU SILICIUM
Abstract: front page image
(EN)An SOI-based opto-electronic structure includes various electronic components disposed with their associated optical components within a single SOI layer, forming a monolithic arrangement. EMI/EMC shielding is provided by forming a metallized outer layer on the surface of an external prism coupler that interfaces with the SOI layer, the metallized layer including transparent apertures to allow an optical signal to be coupled into and out of the SOI layer. The opposing surface of the prism coupler may also be coated with a metallic material to provide additional shielding. Further, metallic shielding plates may be formed on the SOI structure itself, overlying the locations of EMI-sensitive electronics. All of these metallic layers are ultimately coupled to an external ground plane to isolate the structure and provide the necessary shielding.
(FR)Une structure optoélectronique utilisant SOI comprend différents composants électroniques disposés avec leurs composants optiques associés dans une seule couche SOI, formant un agencement monobloc. Une protection EMI/EMC permet de former une couche extérieure métallisée sur la surface d'un coupleur de prisme externe en interface avec la couche SOI, la couche métallisée comprenant des ouvertures transparentes afin d'assurer le couplage d'un signal optique dans et hors de la couche SOI. La surface opposée du coupleur peut également être revêtue d'une matière métallique afin d'assurer les protections supplémentaires. Par ailleurs, des plaques de protection métalliques peuvent être formées sur la structure SOI en soi, recouvrant les emplacements des composants électroniques sensibles à MEI. Toutes les couches métalliques sont couplées à un retour de masse externe afin d'isoler la structure et d'assurer la protection nécessaire.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)