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Machine translation
1. (WO2005038922) FIELD EFFECT TRANSISTOR, PARTICULARLY VERTICAL FIELD EFFECT TRANSISTOR, MEMORY CELL, AND PRODUCTION METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/038922    International Application No.:    PCT/EP2004/052216
Publication Date: 28.04.2005 International Filing Date: 16.09.2004
Chapter 2 Demand Filed:    24.06.2005    
IPC:
H01L 21/8242 (2006.01), H01L 27/108 (2006.01)
Applicants: INFINEON TECHNOLOGIES AG [DE/DE]; St.-Martin-Str. 53, 81669 München (DE) (For All Designated States Except US).
TEWS, Helmut [DE/DE]; (DE) (For US Only)
Inventors: TEWS, Helmut; (DE)
Agent: KINDERMANN, Peter; Patentanwälte Kindermann, P.O. Box 100234, 85593 Baldham (DE)
Priority Data:
10348006.4 15.10.2003 DE
Title (DE) FELDEFFEKTTRANSISTOR, INSBESONDERE VERTIKALER FELDEFFEKTTRANSISTOR, SPEICHERZELLE UND HERSTELLUNGSVERFAHREN
(EN) FIELD EFFECT TRANSISTOR, PARTICULARLY VERTICAL FIELD EFFECT TRANSISTOR, MEMORY CELL, AND PRODUCTION METHOD
(FR) TRANSISTOR A EFFET DE CHAMP, NOTAMMENT TRANSISTOR A EFFET DE CHAMP VERTICAL, CELLULE DE MEMOIRE ET PROCEDE DE FABRICATION
Abstract: front page image
(DE)Erläutert wird unter anderem ein Feldeffekttransistor (37), der einen einkristallinen Steuerbereich (34) hat. Der Feldeffekttransistor (37) bietet Freiheitsgrade für das Schaltungsdesign und lässt sich auf einfache Art herstellen.
(EN)Disclosed is a field effect transistor (37), among other things, which comprises a monocrystalline control area (34). The inventive field effect transistor (37) provides a certain degree of freedom concerning the circuitry design and can be produced in a simple manner.
(FR)L'invention concerne un transistor à effet de champ (37) présentant une zone de commande monocristalline (34). Le transistor à effet de champ (37) selon l'invention offre des degrés de liberté en matière de conception des circuits et peut être fabriqué simplement.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: German (DE)
Filing Language: German (DE)