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1. (WO2005038894) SURFACE-PROTECTING SHEET AND SEMICONDUCTOR WAFER LAPPING METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2005/038894 International Application No.: PCT/JP2004/015131
Publication Date: 28.04.2005 International Filing Date: 14.10.2004
Chapter 2 Demand Filed: 07.04.2005
IPC:
C09J 7/02 (2006.01) ,C09J 201/00 (2006.01) ,H01L 21/304 (2006.01) ,H01L 21/68 (2006.01)
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
J
ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
7
Adhesives in the form of films or foils
02
on carriers
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
J
ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
201
Adhesives based on unspecified macromolecular compounds
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
68
for positioning, orientation or alignment
Applicants: NAGAMOTO, Koichi[JP/JP]; JP (UsOnly)
OHASHI, Hitoshi[JP/JP]; JP (UsOnly)
TAKAHASHI, Kazuhiro[JP/JP]; JP (UsOnly)
LINTEC CORPORATION[JP/JP]; 23-23, Honcho, Itabashi-ku, Tokyo 1730001, JP (AllExceptUS)
Inventors: NAGAMOTO, Koichi; JP
OHASHI, Hitoshi; JP
TAKAHASHI, Kazuhiro; JP
Agent: SUZUKI, Shunichiro; S.SUZUKI & ASSOCIATES, Gotanda Yamazaki Bldg. 6F, 13-6, Nishigotanda 7-chome, Shinagawa-ku, Tokyo 141-0031, JP
Priority Data:
2003-35628016.10.2003JP
Title (EN) SURFACE-PROTECTING SHEET AND SEMICONDUCTOR WAFER LAPPING METHOD
(FR) FEUILLE DE PROTECTION DE SURFACE ET PROCEDE DE RODAGE DE PLAQUETTES SEMI-CONDUCTRICES
(JA) 表面保護用シートおよび半導体ウエハの研削方法
Abstract:
(EN) A surface-protecting sheet not producing any dimple when a wafer is lapped to an extremely small thickness, nor causing damage to and contamination of the wafer where even high bumps are arranged at high density, nor leaving any adhesive on the root portions of the bumps after the sheet is peeled. A method for lapping a semiconductor wafer is also disclosed. The surface-protecting sheet is used for lapping the back of a semiconductor wafer and is characterized in that one side of a base sheet of the surface-protecting sheet has an opening portion having a diameter smaller than that of the semiconductor wafer to which the surface-protecting sheet is stuck and a portion which is provided around the opening portion and on which an adhesive layer is formed.
(FR) L'invention a trait à une feuille de protection de surface qui ne produit aucune dépression lors du rodage d'une plaquette jusqu'à une épaisseur extrêmement réduite, qui n'endommage ni ne contamine la plaquette même aux endroits présentant une forte densité de grandes bosses, et qui ne laisse aucun adhésif sur les parties racines des bosses une fois que la feuille a été décollée. L'invention concerne aussi un procédé de rodage d'une plaquette semi-conductrice. La feuille de protection de surface selon l'invention sert au rodage de l'arrière d'une plaquette semi-conductrice, et est caractérisée en ce que l'un des côtés de la feuille de base de la feuille de protection de surface comporte une partie ouverture possédant un diamètre inférieur à celui de la plaquette semi-conductrice sur laquelle est collée la feuille de protection de surface, ainsi qu'une partie située autour de la partie ouverture et sur laquelle est formée une couche adhésive.
(JA)  本発明の目的は、高さの高いバンプが高密度で配列されたウエハであっても、極薄に研削してもディンプルが発生したりウエハの破損、汚損が起きたりせず、かつ、剥離の後バンプの根本部分にも粘着剤が付着しない表面保護用シートおよび半導体ウエハの研削方法を提供することである。  本発明に係る表面保護用シートは、半導体ウエハの裏面研削を行う際に用いられるものであって、基材シートの片面に、貼付する半導体ウエハの外径よりも小径の粘着剤層が形成されていない開口部と、その外周に形成された粘着剤層が形成されている部分とが設けられてなることを特徴としている。
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)