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Machine translation
1. (WO2005033797) SINGLE PHASE FLUID IMPRINT LITHOGRAPHY METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/033797    International Application No.:    PCT/US2004/031408
Publication Date: 14.04.2005 International Filing Date: 24.09.2004
IPC:
B01D 19/00 (2006.01), B29C 59/02 (2006.01), C23F 1/00 (2006.01)
Applicants: MOLECULAR IMPRINTS, INC. [US/US]; 1807 West Braker Ln, Bldg. C-100, Austin, TX 78758-3605 (US) (For All Designated States Except US).
BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM [US/US]; Ashbel Smith Hall, 7th Floor, The University of Texas System, Austin, TX 78701 (US) (For All Designated States Except US)
Inventors: MCMACKIN, Ian, M.; (US).
BABBS, Daniel, A.; (US).
VOTH, Duane, J.; (US).
WATTS, Michael, P. C.; (US).
TRUSKETT, Van, N.; (US).
XU, Frank, Y.; (US).
VOISIN, Ronald, D.; (US).
LAD, Pankaj, B.; (US).
STACEY, Nicholas, A.; (US)
Agent: BROOKS, Kenneth, C.; P.O. Box 81536, Austin, TX 78708-1536 (US)
Priority Data:
10/677,639 02.10.2003 US
Title (EN) SINGLE PHASE FLUID IMPRINT LITHOGRAPHY METHOD
(FR) PROCEDE D'IMPRESSION LITHOGRAPHIQUE A FLUIDE MONOPHASE
Abstract: front page image
(EN)The present invention is directed toward a method for reducing pattern distortions in imprinting layers by reducing gas pockets present in a layer of viscous liquid deposited on a substrate. To that end, the method includes varying the transport of gases disposed proximate to the viscous liquid. Specifically, the atmosphere proximate to the substrate wherein a pattern is to be recorded is saturated with gases that are either highly soluble, highly diffusive, or both with respect to the viscous liquid being deposited. Additionally, or in lieu of saturating the atmosphere, the pressure of the atmosphere may be reduced.
(FR)L'invention concerne un procédé de réduction de distorsions de motif dans des couches d'impression par réduction de poches de gaz présentes dans une couche de liquide visqueux déposé sur un substrat. A cet effet, le procédé consiste à modifier le transport des gaz disposés sur le liquide visqueux. De manière spécifique, l'atmosphère proche du substrat dans lequel un motif doit être enregistré est saturée par des gaz haute solubilité et/ou haute diffusion par rapport au liquide visqueux étant déposé. En outre, ou au lieu de saturer l'atmosphère, la pression de l'atmosphère peut être réduite.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)