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1. (WO2005031810) FORMATION OF A SILICON GERMANIUM-ON-INSULATOR STRUCTURE BY OXIDATION OF A BURIED POROUS SILICON LAYER
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/031810    International Application No.:    PCT/US2004/029378
Publication Date: 07.04.2005 International Filing Date: 10.09.2004
Chapter 2 Demand Filed:    15.08.2005    
IPC:
H01L 21/20 (2006.01), H01L 21/762 (2006.01)
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road, Armonk, NY 10504 (US) (For All Designated States Except US).
BEDELL, Stephen, W. [US/US]; (US) (For US Only).
CHOE, Kwang, Su [KR/KR]; (KR) (For US Only).
FOGEL, Keith, F. [US/US]; (US) (For US Only).
SADANA, Devendra, K. [US/US]; (US) (For US Only)
Inventors: BEDELL, Stephen, W.; (US).
CHOE, Kwang, Su; (KR).
FOGEL, Keith, F.; (US).
SADANA, Devendra, K.; (US)
Agent: GROLZ, Edward, W.; Scully, Scott, Murphy & Presser, 400 Garden City Plaza, Garden City, NY 11530 (US)
Priority Data:
10/662,028 12.09.2003 US
Title (EN) FORMATION OF A SILICON GERMANIUM-ON-INSULATOR STRUCTURE BY OXIDATION OF A BURIED POROUS SILICON LAYER
(FR) PREPARATION D'UNE STRUCTURE D'ISOLATION SUR SILICIUM-GERMANIUM PAR OXYDATION D'UNE COUCHE NOYEE DE SILICIUM POREUSE
Abstract: front page image
(EN)A simple and direct method of forming a SiGe-on-insulator that relies on the oxidation of a porous silicon layer (or region) that is created beneath a Ge-containing layer is provided. The method includes the steps of providing a structure comprising a Si-containing substrate having a hole-rich region formed therein and a Ge-containing layer atop the Si-containing substrate; converting the hole-rich region into a porous region; and annealing the structure including the porous region to provide a substantially relaxed SiGe-on-insulator material.
(FR)La présente invention concerne un procédé simple et direct de formation d'isolation sur SiGe qui repose sur l'oxydation d'une couche de silicium poreuse (ou d'une région) créée en dessous une couche contenant du Ge. Ce procédé consiste à prendre une structure comprenant un substrat contenant du silicium, possédant une région riche en trous formée à l'intérieur et une couche contenant du germanium au-dessus du substrat contenant du silicium, à transformer la région riche en trous en une région poreuse et à effectuer un recuit de la structure comprenant la région poreuse de façon à obtenir un matériau isolant sur SiGe sensiblement relâché.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)