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1. (WO2005017939) RIBBON-BEAM TRAVELLING WAVE AMPLIFIER WITH A SINGLE-SIDED SLOW-WAVE STRUCTURE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2005/017939 International Application No.: PCT/US2004/019407
Publication Date: 24.02.2005 International Filing Date: 17.06.2004
IPC:
H01J 25/38 (2006.01) ,H01J 23/24 (2006.01) ,H01J 23/54 (2006.01)
Applicants: CHEN, Chiping[US/US]; US (UsOnly)
QIAN, Bao-Liang[CN/US]; US (UsOnly)
TEMKIN, Richard, J.[US/US]; US (UsOnly)
MASSACHUSETTS INSTITUTE OF TECHNOLOGY[US/US]; 77 Massachusetts Avenue Cambridge, MA 02139, US (AllExceptUS)
Inventors: CHEN, Chiping; US
QIAN, Bao-Liang; US
TEMKIN, Richard, J.; US
Agent: CONNORS, Matthew, E. ; Gauthier & Connors LLP 225 Franklin Street, Suite 3300 Boston, MA 02110, US
Priority Data:
60/483,85230.06.2003US
Title (EN) RIBBON-BEAM TRAVELLING WAVE AMPLIFIER WITH A SINGLE-SIDED SLOW-WAVE STRUCTURE
(FR) AMPLIFICATEUR D'ONDES PROGRESSIVES A FAISCEAU DE RUBANS A CRISTAL PHOTONIQUE
Abstract: front page image
(EN) A RF amplifier (2) includes a RF input section (4) for receiving a RF input signal (16). At least one single-sided slow-wave structure (12) is associated with the RF interaction section. An electron ribbon beam (10) that interacts with the RF input supported by the at least one single-sided slow-wave structure (12) so that the kinetic energy of the electron beam (10) is transferred to the RF fields of the RF input signal (16), thus amplifying the RF input signal (16). A RF output section (6) outputs the amplified RF input signal (16).
(FR) Un amplificateur RF comprend une partie d'entrée RF destinée à recevoir un signal d'entrée RF. Au moins une structure à ondes lentes à un côté est associée à la partie à interactions RF. Un faisceau de rubans pour électrons interagit avec l'entrée RF supportée par au moins une structure à ondes lentes à un seul côté, de manière à ce que l'énergie cinétique du faisceau d'électrons soit transférée aux champs RF du signal d'entrée RF, ce qui a pour effet d'amplifier le signal d'entrée RF. La partie de sortie RF émet le signal d'entrée RF amplifié.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)