WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2005017907) READ BIAS SCHEME FOR PHASE CHANGE MEMORIES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/017907    International Application No.:    PCT/US2004/024277
Publication Date: 24.02.2005 International Filing Date: 28.07.2004
IPC:
G11C 16/02 (2006.01)
Applicants: INTEL CORPORATION [US/US]; 2200 Mission College Boulevard, Santa Clara, CA 95052 (US) (For All Designated States Except US).
LOWREY, Tyler [US/US]; (US) (For US Only).
PARKINSON, Ward [US/US]; (US) (For US Only)
Inventors: LOWREY, Tyler; (US).
PARKINSON, Ward; (US)
Agent: TROP, Timothy, N.; Trop, Pruner & Hu, P.C., 8554 Katy Freeway, Suite 100, Houston, TX 77024 (US)
Priority Data:
10/633,872 04.08.2003 US
Title (EN) READ BIAS SCHEME FOR PHASE CHANGE MEMORIES
(FR) MECANISME DE POLARISATION DE LECTURE POUR MEMOIRES A CHANGEMENT DE PHASE
Abstract: front page image
(EN)A read bias scheme may be used for phase change memories including a chalcogenide access device and a chalcogenide memory element. Through an appropriate read bias scheme, desirable read margin can be achieved. This may result in better yield, higher reliability, and ultimately lower costs in some cases.
(FR)L'invention concerne un mécanisme de polarisation de lecture pouvant être utilisé pour des mémoires à changement de phase comprenant un dispositif d'accès à chalcogénure et un élément de mémoire à chalcogénure. Un mécanisme de polarisation de lecture approprié permet d'obtenir une marge de lecture appropriée souhaitable. Cela permet d'obtenir un meilleur rendement, une plus grande fiabilité et des coûts moins élevés dans certains cas.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)