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1. (WO2005014511) BIS(2-ACENYL)ACETYLENE SEMICONDUCTORS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/014511    International Application No.:    PCT/US2004/017108
Publication Date: 17.02.2005 International Filing Date: 02.06.2004
Chapter 2 Demand Filed:    04.05.2005    
IPC:
C07C 15/58 (2006.01), C07C 15/60 (2006.01), C07C 15/62 (2006.01), H01L 51/30 (2006.01)
Applicants: 3M INNOVATIVE PROPERTIES COMPANY [US/US]; 3M Center, Post Office Box 33427, Saint Paul, MN 55133-3427 (US) (For All Designated States Except US)
Inventors: GERLACH, Christopher P.; (US)
Agent: KOKKO, Kent S.; Office of Intellectual Property Counsel, Post Office Box 33427, Saint Paul, MN 55133-3427 (US).
VOSSIUS & PARTNER; P.O. Box 86 07 67, 81634 München (DE)
Priority Data:
10/620,027 15.07.2003 US
Title (EN) BIS(2-ACENYL)ACETYLENE SEMICONDUCTORS
(FR) SEMI-CONDUCTEURS BIS(2-ACENYL)ACETYLENE
Abstract: front page image
(EN)Bis(2-acenyl)acetylene compounds that are useful as organic semiconductors are disclosed. The compounds , when used as the active layer in OTFTs exhibit device characteristics, like charge-carrier mobilities and current on/off ratios, that are comparable to those of pentacene. Also described are semiconductor devices comprising at least one compound of the invention; and articles comprising the semiconductor devices such as thin film transistors or transistor arrays, and electroluminescent lamps.
(FR)L'invention concerne des composés de Bis(2-acényl)acétylène utiles en tant que semi-conducteurs organiques. Ces composés, lorsqu'ils sont utilisés en tant que couche active dans des transistors à couches minces organiques (OTFT), présentent des caractéristiques d'appareil, telles que les mobilités des porteurs de charges et les rapports marche-arrêt du courant, comparables aux caractéristiques du pentacène. Cette invention concerne également des dispositifs semi-conducteurs comprenant au moins un composé décrit dans l'invention; et des articles comprenant de tels dispositifs semi-conducteurs, tels que des transistors à couches minces ou des matrices de transistors et des lampes électroluminescentes.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)