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Machine translation
1. (WO2005013377) SEMICONDUCTOR ELEMENTS HAVING ZONES OF REDUCED OXYGEN
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/013377    International Application No.:    PCT/US2004/023869
Publication Date: 10.02.2005 International Filing Date: 26.07.2004
IPC:
C30B 15/00 (2006.01), C30B 21/06 (2006.01), H01L 31/0248 (2006.01), H01L 31/0352 (2006.01)
Applicants: GE ENERGY (USA) LLC [US/US]; 231 Lake Drive, Newark, Delaware 19702 (US) (For All Designated States Except US).
JONCZYK, Ralf [DE/US]; (US) (For US Only).
KENDALL, Scott L. [US/US]; (US) (For US Only).
RAND, James A. [US/US]; (US) (For US Only)
Inventors: JONCZYK, Ralf; (US).
KENDALL, Scott L.; (US).
RAND, James A.; (US)
Agent: BROWN, Kevin C.; Burr & Brown, P.O. Box 7068, Syracuse, New York 13261-7068 (US)
Priority Data:
60/490,125 25.07.2003 US
Title (EN) SEMICONDUCTOR ELEMENTS HAVING ZONES OF REDUCED OXYGEN
(FR) ELEMENTS SEMI-CONDUCTEURS POSSEDANT DES ZONES A TENEUR EN OXYGENE REDUITE
Abstract: front page image
(EN)There is provided a structure comprising semiconductor material (600), the structure having at least one zone of reduced oxygen concentration, such zone having an interstitial oxygen concentration of not greater than 3 x 1017 oxygen atoms/cm3, such zone extending at least 75 microns in depth from a first major surface. There is further provided a photovoltaic cell comprising at least one such structure.
(FR)L'invention porte sur une structure comprenant un matériau semi-conducteur (600), cette possédant au moins une zone à concentration réduite en oxygène. Cette zone a une concentration interstitielle en oxygène n'excédant pas 3 x 1017 atomes/cm3 et s'étend sur une profondeur d'au moins 75 microns depuis une première surface principale. L'invention porte également sur une pile photovoltaïque comprenant au moins cette structure.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)