WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2005013283) DETECTING OVER PROGRAMMED MEMORY CELLS AFTER PROGRAMMING OF ADJACENT MEMORY CELLS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/013283    International Application No.:    PCT/US2004/021699
Publication Date: 10.02.2005 International Filing Date: 07.07.2004
IPC:
G11C 16/34 (2006.01)
Applicants: SANDISK CORPORATION [US/US]; 140 Caspian Court, Sunnyvale, CA 94089 (US) (For All Designated States Except US).
CHEN, Jian [US/US]; (US) (For US Only).
LI, Yan [US/US]; (US) (For US Only).
LUTZE, Jeffrey, W. [US/US]; (US) (For US Only)
Inventors: CHEN, Jian; (US).
LI, Yan; (US).
LUTZE, Jeffrey, W.; (US)
Agent: MAGEN, Burt; Vierra Magen Marcus Harmon & DeNiro LLP, 685 Market Street, Suite 540, San Francisco, CA 94105 (US)
Priority Data:
10/628,962 29.07.2003 US
Title (EN) DETECTING OVER PROGRAMMED MEMORY CELLS AFTER PROGRAMMING OF ADJACENT MEMORY CELLS
(FR) DETECTION DE CELLULES DE MEMOIRE SURPROGRAMMEES APRES PROGRAMMATION DE CELLULES DE MEMOIRE ADJACENTES
Abstract: front page image
(EN)In a non-volatile semiconductor memory system (or other type of memory system), a memory cell is programmed by changing the threshold voltage of that memory cell. Because of variations in the programming speeds of different memory cells in the system, the possibility exists that some memory cells will be over programmed. That is, in one example, the threshold voltage will be moved past the intended value or range of values. The present invention includes determining whether the memory cells are over programmed due to programming cells of an adjacent row.
(FR)dans un système de mémoire rémanente à semi-conducteur (ou dans d'autres types de système de mémoire), on programme une cellule de mémoire en en modifiant la tension de seuil. Compte tenu des écarts de vitesse de programmation des différentes cellules de mémoire du système, le risque de surprogrammation de certaines de ces cellules ne peut être écarté. C'est le cas notamment lorsqu'une tension de seuil dépasse une valeur ou une plage de valeurs prévues. La présente invention permet de déterminer si des cellules de mémoire sont surprogrammées par suite de la programmation de cellules de mémoire dans une rangée adjacente.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)