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Machine translation
1. (WO2005010998) SELF-ALIGNED CONDUCTIVE LINES FOR FET-BASED MAGNETIC RANDOM ACCESS MEMORY DEVICES AND METHOD OF FORMING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/010998    International Application No.:    PCT/US2003/019772
Publication Date: 03.02.2005 International Filing Date: 24.06.2003
Chapter 2 Demand Filed:    21.01.2005    
IPC:
G11C 11/15 (2006.01), H01L 27/22 (2006.01)
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road, Armonk, NY 10504 (US) (For All Designated States Except US).
GAIDIS, Michael, C. [US/US]; (US) (For US Only)
Inventors: GAIDIS, Michael, C.; (US)
Agent: PEPPER, Margaret, A.; International Business Machines Corporation, 2070 Route 53, Hopewell Junction, NY 12533 (US).
SEAN, Sullivan, F.; Cantop Colburn LLP, 55 Griffin Road South, Bloomfield, CT 06002 (US)
Priority Data:
Title (EN) SELF-ALIGNED CONDUCTIVE LINES FOR FET-BASED MAGNETIC RANDOM ACCESS MEMORY DEVICES AND METHOD OF FORMING THE SAME
(FR) TRACES CONDUCTEURS AUTO ALIGNES POUR DISPOSITIF MEMOIRE A ACCES DIRECT A BASE DE FET ET PROCEDES DE FABRICATION DE CES TRACES
Abstract: front page image
(EN)A conductive line structure for a field effect transistor (FET) based magnetic random access memory (MRAM) device includes a lateral metal strap (326) conductively coupled to a lower metallization line (302). A magnetic tunnel junction (MTJ) stack (316) is formed on the metal strap (326), and a metal shield (324) is formed over the MTJ stack (316), the metal shield (324) being self-aligned with respect to the metal strap (326). An upper metallization line (332) is conductively coupled to the metal shield (324), wherein the metal shield (324) serves as an etch stop during the formation of the upper metallization line (332).
(FR)La présente invention concerne une structure de tracé conducteur destiné à un dispositif mémoire à accès direct magnétique (MRAM) à base de transistor à effet de champ (FET), qui comprend une bande métallique latérale (326) couplée de manière conductrice a un tracé de métallisation inférieur (302). Une pile jonction tunnel magnétique (MTJ) (316) est formée sur la bande métallique (326) et, un blindage métallique (324) est formé sur la pile MTJ (316), ce blindage métallique (324) étant auto aligné par rapport à la bande métallique (326). Un tracé de métallisation supérieure (332) est couplé de manière conductrice au blindage métallique (324), ce blindage métallique (324) servant à stopper la gravure pendant la formation du tracé de métallisation supérieur (332).
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, OM, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)