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1. (WO2005010941) ETHYLENEOXIDE-SILANE AND BRIDGED SILANE PRECURSORS FOR FORMING LOW K FILMS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2005/010941 International Application No.: PCT/US2004/022721
Publication Date: 03.02.2005 International Filing Date: 01.07.2004
Chapter 2 Demand Filed: 26.01.2005
IPC:
C07F 7/18 (2006.01) ,C07F 7/08 (2006.01)
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
F
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
7
Compounds containing elements of the 4th Group of the Periodic System
02
Silicon compounds
08
Compounds having one or more C-Si linkages
18
Compounds having one or more C-Si linkages as well as one or more C-O-Si linkages
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
F
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
7
Compounds containing elements of the 4th Group of the Periodic System
02
Silicon compounds
08
Compounds having one or more C-Si linkages
Applicants: BOROVIK, Alexander, S.[BY/US]; US (UsOnly)
XU, Chongying[US/US]; US (UsOnly)
BAUM, Thomas, H.[US/US]; US (UsOnly)
BILODEAU, Steven[US/US]; US (UsOnly)
ROEDER, Jeffrey, R.[US/US]; US (UsOnly)
EBBING, Abigail[US/US]; US (UsOnly)
VESTYCK, Daniel[US/US]; US (UsOnly)
ADVANCED TECHNOLOGY MATERIALS, INC.[US/US]; 7 Commerce Drive Danbury, CT 06810, US (AllExceptUS)
Inventors: BOROVIK, Alexander, S.; US
XU, Chongying; US
BAUM, Thomas, H.; US
BILODEAU, Steven; US
ROEDER, Jeffrey, R.; US
EBBING, Abigail; US
VESTYCK, Daniel; US
Agent: WILLIAM F. RYANN; Advanced Technology Materials, Inc. 7 Commerce Drive Danbury, CT 06810, US
Priority Data:
10/619,78515.07.2003US
Title (EN) ETHYLENEOXIDE-SILANE AND BRIDGED SILANE PRECURSORS FOR FORMING LOW K FILMS
(FR) PRECURSEURS DE SILANE D'OXYDE D'ETHYLENE ET DE SILANE PONTES POUR LA FORMATION DE FILMS A FAIBLE CONSTANTE DIELECTRIQUE
Abstract:
(EN) An organosilicon precursor for vapor deposition, e.g., low pressure (< 100 Torr), plasma-enhanced chemical vapor deposition (PECVD) of a low k, high strength dielectric film, wherein the precursor includes at least one of: (i) silicon-pendant oxiranyl functionality; and (ii) a disilyl moiety of the formula wherein x is an integer having a value of from 0 to 4 inclusive. These precursors are useful for the formation of dielectric films having dielectric constants on the order of ˜3 and less, and a hardness exceeding ˜ 1 GigaPascals.
(FR) L'invention concerne un précurseur d'organosilicium pour le dépôt en phase vapeur, par exemple, pour le dépôt en phase vapeur activé par plasma (PECVD) à basse pression (< 100 Torr) d'un film diélectrique haute résistance, à faible constante diélectrique. Ce précurseur comprend au moins : (i) une fonction oxiranyle latérale de silicium ; ou (ii) un fragment disilyle de formule (I) dans laquelle x est un nombre entier compris entre 0 et 1 inclus. Ces précurseurs sont utiles pour la formation de films diélectriques à constantes diélectriques inférieures ou égales à environ 3, et dont la rigidité dépasse environ 1 gigapascal.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)