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1. WO2004112130 - SEMICONDUCTOR DEVICE

Publication Number WO/2004/112130
Publication Date 23.12.2004
International Application No. PCT/JP2004/005929
International Filing Date 23.04.2004
IPC
H01L 23/373 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
373Cooling facilitated by selection of materials for the device
CPC
H01L 23/373
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
373Cooling facilitated by selection of materials for the device ; or materials for thermal expansion adaptation, e.g. carbon
H01L 2924/0002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
0001Technical content checked by a classifier
0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applicants
  • 本田技研工業株式会社 HONDA MOTOR CO., LTD. [JP]/[JP] (AllExceptUS)
  • 塚田 能成 TSUKADA, Yoshinari [JP]/[JP] (UsOnly)
  • 蜂須賀 公朗 HACHISUKA, Kimio [JP]/[JP] (UsOnly)
  • 鑓田 宏 YARITA, Hiroshi [JP]/[JP] (UsOnly)
  • 高野 文朋 TAKANO, Fumitomo [JP]/[JP] (UsOnly)
  • 山中 保朗 YAMANAKA, Yasuro [JP]/[JP] (UsOnly)
Inventors
  • 塚田 能成 TSUKADA, Yoshinari
  • 蜂須賀 公朗 HACHISUKA, Kimio
  • 鑓田 宏 YARITA, Hiroshi
  • 高野 文朋 TAKANO, Fumitomo
  • 山中 保朗 YAMANAKA, Yasuro
Agents
  • 下田 容一郎 SHIMODA, Yo-ichiro
Priority Data
2003/16547710.06.2003JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF A SEMI-CONDUCTEURS
(JA) 半導体装置
Abstract
(EN) A semiconductor device (10) comprises an intermediate layer (13) arranged between a semiconductor element (11) and a heatsink (12). The intermediate layer (13) reduces thermal stress which is caused by the heat generated in the semiconductor element (11) due to the thermal expansion gap between the semiconductor element (11) and the heatsink (12). By reducing the thermal stress, warping of the semiconductor device (10) as a whole can be reduced. The intermediate layer (13) is, for example, composed of a carbon-copper composite material.
(FR) Cette invention concerne un dispositif à semi-conducteurs (10) comprenant une couche intermédiaire (13) disposée entre un élément semi-conducteur (11) et un puits thermique (12). La couche intermédiaire (13) réduit la contrainte thermique qui est causée par la chaleur générée dans l'élément semi-conducteur (11) en raison de l'espace de dilatation thermique situé entre l'élément semi-conducteur (11) et le puits thermique (12). La réduction de la contrainte thermique permet de réduire le gauchissement du dispositif à semi-conducteurs (10) dans son ensemble. La couche intermédiaire (13) est, par exemple, constituée de matériau composite à base de carbone et de cuivre.
(JA) not available
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