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1. WO2004112079 - MAGNETRON SPUTTER CATHODE COMPRISING A COOLING PLATE

Publication Number WO/2004/112079
Publication Date 23.12.2004
International Application No. PCT/DE2004/000208
International Filing Date 07.02.2004
IPC
C23C 14/35 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
35by application of a magnetic field, e.g. magnetron sputtering
H01J 37/34 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes
34operating with cathodic sputtering
CPC
C23C 14/3407
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
3407Cathode assembly for sputtering apparatus, e.g. Target
H01J 37/3408
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
3402using supplementary magnetic fields
3405Magnetron sputtering
3408Planar magnetron sputtering
H01J 37/3497
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
3488Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
3497Temperature of target
Applicants
  • APPLIED FILMS GMBH AND CO. KG [DE]/[DE] (AllExceptUS)
  • KREMPEL-HESSE, Jörg [DE]/[DE] (UsOnly)
  • JISCHKE, Andreas [DE]/[DE] (UsOnly)
  • SCHÜSSLER, Uwe [DE]/[DE] (UsOnly)
  • WOLF, Hans [DE]/[DE] (UsOnly)
Inventors
  • KREMPEL-HESSE, Jörg
  • JISCHKE, Andreas
  • SCHÜSSLER, Uwe
  • WOLF, Hans
Agents
  • HEBING, Norbert
Priority Data
103 23 258.323.05.2003DE
Publication Language German (de)
Filing Language German (DE)
Designated States
Title
(DE) MAGNETRON-SPUTTER-KATHODE MIT KÜHLPLATTE
(EN) MAGNETRON SPUTTER CATHODE COMPRISING A COOLING PLATE
(FR) CATHODE DE PULVERISATION MAGNETRON A PLAQUE DE REFROIDISSEMENT
Abstract
(DE) Um eine relative breite Magnetron-Sputter-Kathode realisieren zu können, wird vorgeschlagen, dass auf der Vakuumseite eines Trägers (2) das Sputter-Target (4) mit einer Rückenplatte (3) angeordnet wird, die zum Träger (2) einen Spalt (14) einhält. Die Rückenplatte (3) ist als Kühlplatte ausgebildet. In ihr befinden sich Kühlmittelkanäle (15), die über einen Zulauf (16) durch den Träger (2) mit Kühlflüssigkeit versorgt werden, die über einen Rücklauf (17) durch den Träger (2) wieder abfliessen kann. Auf der Atmosphärenseite befindet sich eine Magnetanordnung (5).
(EN) The aim of the invention is to create a relatively large magnetron sputter cathode. Said aim is achieved by disposing the sputter target (4) with a rear plate (3) on the vacuum side of a support (2). Said rear plate (3) maintains a gap (14) relative to the support (2) and is embodied as a cooling plate. Coolant ducts (15) located within the rear plate (3) are supplied with cooling liquid via a feeding conduit (16) that penetrates the support (2). The cooling liquid can be discharged via a return conduit (17) that penetrates the support (2). A magnet array (5) is positioned on the atmospheric side.
(FR) L'objet de la présente invention est la réalisation d'une cathode de pulvérisation magnétron relativement large. A cet effet, la cible de pulvérisation (4) pourvue d'une plaque arrière (3) est placée du côté du vide d'un support (2), ladite plaque étant séparée du support (2) par un interstice (14). La plaque arrière (3), qui est conçue en tant que plaque de refroidissement, contient des conduits (15) pour milieu de refroidissement alimentés en liquide de refroidissement par une conduite d'amenée (16) ménagée à travers le support (2), le liquide de refroidissement pouvant ressortir par une conduite de retour (17) ménagée à travers le support (2). Un ensemble aimants est situé du côté atmosphère ambiante (5).
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