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Machine translation
1. (WO2004102639) WET-TANTALUM REFORMATION METHOD AND APPARATUS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/102639    International Application No.:    PCT/US2004/014037
Publication Date: 25.11.2004 International Filing Date: 06.05.2004
IPC:
A61N 1/378 (2006.01), A61N 1/39 (2006.01)
Applicants: MEDTRONIC, INC. [US/US]; 710 Medtronic Parkway, Minneapolis, MN 55432 (US) (For All Designated States Except US).
NORTON, John, D. [US/US]; (US) (For US Only).
MELODY, Brian, J. [US/US]; (US) (For US Only).
KINARD, John, Tony [US/US]; (US) (For US Only)
Inventors: NORTON, John, D.; (US).
MELODY, Brian, J.; (US).
KINARD, John, Tony; (US)
Agent: GUNDERSEN, JEFFREY, S.; Foley & Lardner LLP, 777 East Wisconsin Avenue, Suite 3800, Milwaukee, WI 53202-5306 (US)
Priority Data:
10/431,356 07.05.2003 US
Title (EN) WET-TANTALUM REFORMATION METHOD AND APPARATUS
(FR) PROCEDE ET APPAREIL DE REFORMATION DE CONDENSATEUR AU TANTALE IMPREGNE
Abstract: front page image
(EN)A method of reforming a wet-tantalum capacitor is disclosed. The method comprises charging the capacitor to a voltage that is substantially less than one of a maximum and rated voltage for the capacitor. The method also comprises providing an open circuit condition and allowing the capacitor to at least partially discharge through leakage current.
(FR)L'invention concerne un procédé de reformage d'un condensateur au tantale imprégné. Ledit procédé consiste à charger le condensateur à une tension qui est sensiblement inférieure à une tension maximum et nominale du condensateur. Le procédé consiste également à utiliser une condition de circuit ouvert et à permettre au condensateur de se décharger au moins en partie à travers un courant de fuite.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)