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Machine translation
1. (WO2004102632) HIGH POWER ALLNGAN BASED MULIT-CHIP LIGHT EMITTING DIODE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/102632    International Application No.:    PCT/US2004/014919
Publication Date: 25.11.2004 International Filing Date: 11.05.2004
IPC:
H01L 33/20 (2010.01), F21L 4/02 (2006.01), H01L 33/60 (2010.01), H01L 25/075 (2006.01)
Applicants: ELITE OPTOELECTRONICS, INC. [US/US]; 18042 Courtney Court,, City of Industry, California 91748 (US)
Inventors:
Agent: CARTE, Norman; MacPherson Kwok Chen & Heid LLP, 1762 Technology Drive, Suite 226, San Jose, CA 95110 (US)
Priority Data:
10/438,108 13.05.2003 US
Title (EN) HIGH POWER ALLNGAN BASED MULIT-CHIP LIGHT EMITTING DIODE
(FR) DIODE ELECTROLUMINESCENTE HAUTE PUISSANCE A PLUSIEURS PUCES A BASE DE ALLNGAN
Abstract: front page image
(EN)A light emitting diode chip having a substantially transparent substrate and having an aspect ratio, which defines an elongated geometry provides enhanced efficiency and brightness. Method for forming and operating the same are also disclosed.
(FR)L'invention concerne une puce de diode électroluminescente pourvue d'un substrat sensiblement transparent et présentant un rapport d'allongement définissant une géométrie allongée, cette puce de diode développant une efficacité et une luminosité améliorées. La présente invention porte également sur un procédé de production et d'utilisation de ladite puce de diode.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)