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1. (WO2004102619) CHEMICAL VAPOR DEPOSITION EPITAXIAL GROWTH
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/102619    International Application No.:    PCT/US2004/013058
Publication Date: 25.11.2004 International Filing Date: 27.04.2004
Chapter 2 Demand Filed:    07.12.2004    
IPC:
B60R 25/02 (2006.01), H01L 23/58 (2006.01)
Applicants: CARACAL, INC. [US/US]; 4514 Plummer Street, Pittsburgh, Pennsylvania 15201 (US) (For All Designated States Except US).
KORDINA, Olof, Claes, Erik [SE/US]; (US) (For US Only)
Inventors: KORDINA, Olof, Claes, Erik; (US)
Agent: KLUGER, Joan, T.; Schnader Harrison Segal & Lewis LLP, 1600 Market Street, Suite 3600, Philadelphia, PA 19103 (US)
Priority Data:
10/431,819 08.05.2003 US
Title (EN) CHEMICAL VAPOR DEPOSITION EPITAXIAL GROWTH
(FR) CROISSANCE EPITAXIALE PAR DEPOT CHIMIQUE EN PHASE VAPEUR
Abstract: front page image
(EN)A method of forming a layer of silicon carbide wherein silicon clusters are dissociated in a gas phase. Silicon clusters may be dissociated by a silicon-etching gas such as a group VII-containing component. A semiconductor device is also disclosed having a layer formed by the methods of the invention.
(FR)L'invention concerne un procédé permettant de former une couche de carbure de silicium, comprenant une dissociation des agrégats de silicium dans une phase gazeuse. Les agrégats de silicium peuvent être dissociés par un gaz de gravure de silicium tel qu'un composant contenant un élément du groupe VII. L'invention concerne également un dispositif semi-conducteur comprenant une couche formée au moyen des procédés décrits.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)