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1. (WO2004098060) HIGH SPEED BI-DIRECTIONAL SOLID STATE SWITCH
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2004/098060 International Application No.: PCT/GB2004/001793
Publication Date: 11.11.2004 International Filing Date: 27.04.2004
IPC:
H03K 17/687 (2006.01)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
17
Electronic switching or gating, i.e. not by contact-making and -breaking
51
characterised by the use of specified components
56
by the use, as active elements, of semiconductor devices
687
the devices being field-effect transistors
Applicants: KINECTRICS INC[CA/CA]; 800 Kipling Avenue Toronto, Ontario M8Z 6C4, CA (AE, AG, AL, AM, AT, AU, AZ, BA, BB, BE, BF, BG, BJ, BR, BW, BY, BZ, CA, CF, CG, CH, CI, CM, CN, CO, CR, CU, CY, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, FR, GA, GB, GD, GE, GH, GM, GN, GQ, GR, GW, HR, HU, ID, IE, IL, IN, IS, IT, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MC, MD, MG, MK, ML, MN, MR, MW, MX, MZ, NA, NE, NI, NL, NO, NZ, OM, PH, PL, PT, RO, RU, SC, SD, SE, SG, SI, SK, SL, SN, SY, SZ, TD, TG, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW)
AEA Technology plc[GB/GB]; 329 Harwell Didcot Oxfordshire OX11 0QJ, GB (PG)
Inventors: DE BUDA, Eric, George; CA
Agent: MANSFIELD, Peter, Turquand ; Accentus plc Patent Dept. 329 Harwell Didcot Oxfordshire OX11 0QJ, GB
Priority Data:
242703929.04.2003CA
Title (EN) HIGH SPEED BI-DIRECTIONAL SOLID STATE SWITCH
(FR) COMMUTATEUR TRANSISTORISE BIDIRECTIONNEL ULTRARAPIDE
Abstract:
(EN) A bi-directional solid state switch has two main field effect transistors (3, 8) which are connected to each other with source to source (S) and gate to gate (G). Each drain (D) is separately connected to an output terminal of the switch. An electrical impedance (5) is connected between the gates (G) and the sources (S). A driver signal (V) is connected between the gates (G) and one drain (D). This circuit topology is counter­intuitive, but provides advantages which can include eliminating the need for electrical isolation, being capable of turning on or off at any time, at or between zero crossings, having a high speed of response, simplicity, reliability, cost-effectiveness, and energy-efficiency.
(FR) L'invention concerne un commutateur transistorisé bidirectionnel comprenant deux transistors (3, 8) principaux à effet de champ, raccordés mutuellement par les sources (S) et par les grilles (G) respectives. Chaque drain (D) est raccordé séparément à une borne de sortie du commutateur. Une impédance électrique (5) est raccordée aux grilles (G) et aux sources (S). Un signal d'attaque (V) est transmis entre les grilles (G) et un drain (D). Cette topologie de circuit est contre-intuitive, mais offre des avantages pouvant notamment comprendre la suppression de la nécessité d'une isolation électrique, la possibilité de l'arrêter à tout moment, aux passages par zéro ou entre ces derniers, un délai de réponse très court, ainsi que la simplicité, la fiabilité, un bon rapport coût-efficacité et un haut rendement énergétique.
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)