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Machine translation
1. (WO2004097924) COMPOUND SEMICONDUCTOR EPITAXIAL SUBSTRATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/097924    International Application No.:    PCT/JP2004/005016
Publication Date: 11.11.2004 International Filing Date: 07.04.2004
IPC:
H01L 21/331 (2006.01), H01L 29/08 (2006.01), H01L 29/207 (2006.01), H01L 29/737 (2006.01)
Applicants: SUMITOMO CHEMICAL COMPANY LIMITED [JP/JP]; 27-1, Shinkawa 2-chome, Chuo-ku, Tokyo 104-8260 (JP) (For All Designated States Except US).
SUMIKA EPI SOLUTION COMPANY LTD. [JP/JP]; 27-1, Shinkawa 2-chome, Chuo-ku, Tokyo, 1048260 (JP) (For All Designated States Except US).
YAMADA, Hisashi [JP/JP]; (JP) (For US Only).
OSADA, Takenori [JP/JP]; (JP) (For US Only).
FUKUHARA, Noboru [JP/JP]; (JP) (For US Only)
Inventors: YAMADA, Hisashi; (JP).
OSADA, Takenori; (JP).
FUKUHARA, Noboru; (JP)
Agent: ASAMURA, Kiyoshi; Room 331, New Ohtemachi Bldg., 2-1, Ohtemachi 2-chome, Chiyoda-ku, Tokyo 1000004 (JP)
Priority Data:
2003-124374 28.04.2003 JP
Title (EN) COMPOUND SEMICONDUCTOR EPITAXIAL SUBSTRATE
(FR) SUBSTRAT ÉPITAXIAL À COMPOSÉ SEMI-CONDUCTEUR
(JA) 化合物半導体エピタキシャル基板
Abstract: front page image
(EN)A compound semiconductor epitaxial substrate comprising a substrate, and a sub-collector layer, a collector layer, a base layer, an emitter layer, and a contact layer formed in the order mentioned on the substrate, wherein a layer containing oxygen is formed between the substrate and the sub-collector layer.
(FR)L'invention concerne un substrat épitaxial à composé semi-conducteur qui comprend un substrat sur lequel sont appliquées dans l'ordre les couches suivantes : une couche de sous-collecteur, une couche de collecteur, une couche de base, une couche d'émetteur et une couche de contact. Une couche contenant de l'oxygène est formée entre le substrat et la couche de sous-collecteur.
(JA) 基板、及び該基板上に形成された、サブコレクタ層、コレクタ層、ベース層、エミッタ層、及びコンタクト層をこの順序で含んでなる化合物半導体エピタキシャル基板において、前記基板と前記サブコレクタ層との間に酸素を含む層を有する上記化合物半導体エピタキシャル基板。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)