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Machine translation
1. (WO2004097077) METHOD FOR THE ETCHING OF PERMEABLE MEMBRANES MADE FROM SEMICONDUCTOR MATERIALS USING MACRO- AND MESO-PORE ETCHING
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/097077    International Application No.:    PCT/DE2004/000864
Publication Date: 11.11.2004 International Filing Date: 23.04.2004
IPC:
C25F 3/12 (2006.01), H01L 21/3063 (2006.01)
Applicants: CHRISTIAN-ALBRECHTS-UNIVERSITÄT ZU KIEL [DE/DE]; Olshausenstrasse 40, 24118 Kiel (DE) (For All Designated States Except US).
FOELL, Helmut [DE/DE]; (DE) (For US Only).
CARSTENSEN, Juergen [DE/DE]; (DE) (For US Only).
CHRISTOPHERSEN, Marc [DE/US]; (US) (For US Only)
Inventors: FOELL, Helmut; (DE).
CARSTENSEN, Juergen; (DE).
CHRISTOPHERSEN, Marc; (US)
Agent: BIEHL, Christian; c/o Boehmert & Boehmert, Niemannsweg 133, 24105 Kiel (DE)
Priority Data:
103 18 995.5 25.04.2003 DE
Title (DE) VERFAHREN ZUR ÄTZUNG VON DURCHGÄNGIGEN MEMBRANEN AUS HALBLEITERMATERIALIEN UNTER NUTZUNG VON MAKRO- UND MESOPORENÄTZUNG
(EN) METHOD FOR THE ETCHING OF PERMEABLE MEMBRANES MADE FROM SEMICONDUCTOR MATERIALS USING MACRO- AND MESO-PORE ETCHING
(FR) PROCEDE DE GRAVURE DE MEMBRANES PERMEABLES A PARTIR DE MATERIAUX SEMICONDUCTEURS PAR GRAVURE DE MACRO- ET MESOPORES
Abstract: front page image
(DE)Verfahren zur Herstellung von durchgängigen Membranen aus Halbleitermaterialien unter elektrochemischer Ätzung von Makroporen an einer Flachseite eines im wesentlichen flächigen Halbleiters, bei dem von der den Makroporen gegenüberliegenden Flachseite des Halbleiters Mesoporen geätzt werden.
(EN)The invention relates to a method for the production of permeable membranes made from semiconductor materials, by electrochemical etching of macro-pores on a plane side of an essentially planar semiconductor, whereby mesopores are etched on the plane side of the semiconductor opposing the macropores.
(FR)L'invention concerne un procédé de production de membranes perméables à partir de matériaux semiconducteurs par gravure électrochimique de macropores sur un côté plat d'un semiconducteur sensiblement plan. Selon ledit procédé, des mésopores sont gravés sur le côté plat du semiconducteur opposé aux macropores.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: German (DE)
Filing Language: German (DE)