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Machine translation
1. (WO2004095583) RADIATION-HARDENED TRANSISTOR FABRICATED BY MODIFIED CMOS PROCESS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/095583    International Application No.:    PCT/US2004/011818
Publication Date: 04.11.2004 International Filing Date: 16.04.2004
IPC:
H01L 21/8238 (2006.01), H01L 23/58 (2006.01), H01L 29/10 (2006.01)
Applicants: RAYTHEON COMPANY [US/US]; 870 Winter Street, Office of the General Counsel, Waltham, MA 02451 (US)
Inventors: LUM, Wing Y.; (US)
Agent: SCHUBERT, William C.; c/o Raytheon Company, EO/E04/N119, 2000 East El Segundo Boulevard, P. O. Box 902, El Segundo, CA 90245 (US)
Priority Data:
10/417,021 16.04.2003 US
Title (EN) RADIATION-HARDENED TRANSISTOR FABRICATED BY MODIFIED CMOS PROCESS
(FR) TRANSISTOR RESISTANT AUX RADIATIONS REALISE PAR PROCESSUS CMOS MODIFIE
Abstract: front page image
(EN)An NMOS field effect transistor (1) is made radiation hard by a pair of guard band implants (115) of limited horizontal extent, extending between the source (30A) and drain (30B) along the edge of the transistor body, and extending only to a limited extent into the field insulator and into the interior of the transistor, leaving an unimplanted area in the center of the body that retains the transistor design threshold voltage.
(FR)L'invention concerne un transistor à effet de champ NMOS (1) rendu résistant aux radiations au moyen de deux implants de bande de garde (115) d'étendue horizontale limitée, se trouvant entre la source (30A) et le drain (30B) sur le bord du corps du transistor, et s'étendant jusqu'à une certaine limite dans l'isolant de champ et à l'intérieur du transistor, laissant ainsi une zone inoccupée au centre du corps qui arrête la tension seuil du transistor.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)