WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2004095562) SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/095562    International Application No.:    PCT/JP2004/005230
Publication Date: 04.11.2004 International Filing Date: 13.04.2004
IPC:
H01L 21/04 (2006.01)
Applicants: OHMI, Tadahiro [JP/JP]; (JP).
TERAMOTO, Akinobu [JP/JP]; (For US Only)
Inventors: OHMI, Tadahiro; (JP).
TERAMOTO, Akinobu;
Agent: GOTO, Yosuke; The Third Mori Building, 4-10, Nishishinbashi 1-chome Minato-ku, Tokyo 1050003 (JP)
Priority Data:
2003-114616 18.04.2003 JP
Title (EN) SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME
(FR) DISPOSITIF A SEMI-CONDUCTEUR ET PROCEDE DE PRODUCTION ASSOCIE
(JA) 半導体装置及び半導体装置の製造方法
Abstract: front page image
(EN)A semiconductor device comprising a substrate of SiC provided with an insulating film through plasma treatment. Rare gas is incorporated in the insulating film. Preferably, at least one of krypton (Kr), argon (Ar) and xenon (Xe) is used as the rare gas. A combination of oxygen gas and krypton (Kr) is especially preferred.
(FR)L'invention concerne un dispositif à semi-conducteur qui comprend un substrat de SiC pourvu d'un film isolant obtenu par traitement au plasma. Un gaz rare est intégré dans le film isolant. De préférence, ce gaz est au moins l'un des gaz suivants : krypton (Kr), argon (Ar) et xénon (Xe). Idéalement, ce gaz est une combinaison d'oxygène gazeux et de krypton (Kr).
(JA)本発明に係る半導体装置は、基板としてSiCを採用するとともに、プラズマ処理によって絶縁膜を形成している。このとき、絶縁膜中に希ガスを含有させる。好ましくは、希ガスとして、クリプトン(Kr)、アルゴン(Ar)、キセノン(Xe)の少なくとも1つを含有する。特に、酸素ガスとクリプトン(Kr)の組み合わせが好ましい。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)