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Machine translation
1. (WO2004095551) METHOD AND APPARATUS FOR MULTILAYER PHOTORESIST DRY DEVELOPMENT
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/095551    International Application No.:    PCT/US2004/001405
Publication Date: 04.11.2004 International Filing Date: 21.01.2004
IPC:
H01L 21/027 (2006.01), H01L 21/311 (2006.01)
Applicants: TOKYO ELECTRON LIMITED [JP/JP]; TBS Broadcast Center, 3-6, Akasaka 5-chome, Minato-ku, Tokyo 107 (JP) (For All Designated States Except US).
INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road, Armonk, NY 10504 (US) (For All Designated States Except US).
BALASUBRAMANIAM, Vaidyanathan [IN/US]; (US) (For US Only).
INAZAWA, Koichiro [JP/US]; (US) (For US Only).
WISE, Rich [US/US]; (US) (For US Only).
MAHOROWALA, Arpan, P. [US/US]; (US) (For US Only).
PANDA, Siddhartha [IN/US]; (US) (For US Only)
Inventors: BALASUBRAMANIAM, Vaidyanathan; (US).
INAZAWA, Koichiro; (US).
WISE, Rich; (US).
MAHOROWALA, Arpan, P.; (US).
PANDA, Siddhartha; (US)
Agent: LAZAR, Dale, S.; Pillsbury Winthrop LLP, P.O. Box 10500, McLean, VA 22102 (US)
Priority Data:
60/458,430 31.03.2003 US
60/484,225 05.05.2003 US
10/640,577 14.08.2003 US
Title (EN) METHOD AND APPARATUS FOR MULTILAYER PHOTORESIST DRY DEVELOPMENT
(FR) PROCEDE ET APPAREIL POUR LE DEVELOPPEMENT A SEC DE PHOTORESIST MULTICOUCHE
Abstract: front page image
(EN)A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising ammonia (NH3), and a passivation gas; forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute NH3 and a hydrocarbon gas such as at least one of C2H4, CH4, C2H2, C2H6, C3H4, C3H6, C3H8, C4H6, C4H8, C4H10, C5H8, C5H10, C6H6, C6H10, and C6H12. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising ammonia (NH3), and a passivation gas.
(FR)L'invention concerne un procédé de gravure d'une couche de revêtement antireflet organique (ARC) sur un substrat se trouvant dans un système de traitement au plasma, qui consiste à : introduire un gaz de procédé comprenant de l'ammoniac (NH3) et un gaz de passivation ; former un plasma à partir du gaz de procédé ; et exposer le substrat au plasma. Le gaz de procédé peut, par exemple, être du NH3 et un gaz hydrocarboné tel qu'au moins un parmi C2H4, CH4, C2H2, C2H6, C3H4, C3H6, C3H8, C4H6, C4H8, C4H10, C5H8, C5H10, C6H6, C6H10,et C6H12. Par ailleurs, la chimie de traitement consiste également à ajouter de l'hélium. L'invention porte également sur un procédé de formation d'un masque bicouche pour graver une couche mince sur un substrat, qui consiste à : former la couche mince sur le substrat ; former une couche d'ARC sur la couche mince ; former un motif de photorésist sur la couche d'ARC ; et transférer le motif de photorésist sur la couche d'ARC par un procédé de gravure utilisant un gaz de procédé comprenant de l'ammoniac (NH3), et un gaz de passivation.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)