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1. (WO2004094527) FLUORINE-CONTAINING ELASTOMER COMPOSITION WITH EXCELLENT PLASMA-AGING PREVENTION EFFECT AND SHAPED ARTICLE MADE THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/094527    International Application No.:    PCT/JP2004/005688
Publication Date: 04.11.2004 International Filing Date: 21.04.2004
IPC:
C09K 3/10 (2006.01)
Applicants: DAIKIN INDUSTRIES LTD. [JP/JP]; Umeda Center Bldg., 4-12, Nakazaki-Nishi 2-chome, Kita-ku, Osaka-shi, Osaka 5308323 (JP) (For All Designated States Except US).
TANAKA, Hiroyuki [JP/JP]; (JP) (For US Only).
FUKUYAMA, Kouji [JP/JP]; (JP) (For US Only).
NOGUCHI, Tsuyoshi [JP/JP]; (JP) (For US Only)
Inventors: TANAKA, Hiroyuki; (JP).
FUKUYAMA, Kouji; (JP).
NOGUCHI, Tsuyoshi; (JP)
Agent: ASAHINA, Sohta; NS Building 2-22, Tanimachi 2-chome, Chuo-ku Osaka-shi, Osaka 5400012 (JP)
Priority Data:
2003-117520 22.04.2003 JP
2003-381323 11.11.2003 JP
Title (EN) FLUORINE-CONTAINING ELASTOMER COMPOSITION WITH EXCELLENT PLASMA-AGING PREVENTION EFFECT AND SHAPED ARTICLE MADE THEREOF
(FR) COMPOSITION FLUOREE A BASE D'ELASTOMERE POSSEDANT UNE EXCELLENTE ACTION DE PREVENTION DU VIEILLISSEMENT DU PLASMA, ET ARTICLE FAÇONNE REALISE A PARTIR DE CETTE COMPOSITION
(JA) プラズマ老化防止効果に優れた含フッ素エラストマー組成物およびその成形品
Abstract: front page image
(EN)A fluorine-containing elastomer composition is disclosed which has no adverse effect on heat resistance and workability of a semiconductor, and changes little in weight when exposed to a fluorine plasma or an oxygen plasma during the manufacturing process of the semiconductor, thereby remarkably suppressing formation of contaminants (particles) during the plasma process. An shaped article made of such a composition is also disclosed.
(FR)L'invention concerne une composition à base d'élastomère fluorée, qui ne présente aucun effet indésirable sur la résistance thermique ou l'aptitude au façonnage d'un semiconducteur, et ne change quaisment pas de poids lorsqu'elle exposée à un plasma fluoré ou à un plasma oxygène durant le processus de fabrication du semiconducteur, ce qui élimine considérablement la formation de contaminants (particules) durant le traitement au plasma. L'invention concerne en outre un article façonné réalisé à partir de cette composition.
(JA) 耐熱性、加工性に悪影響を及ぼさず、さらに半導体の製造工程で曝されるフッ素系プラズマおよび酸素プラズマに対してともに重量変化が小さく、これらの処理において異物(パーティクル)の発生を顕著に抑制し得る含フッ素エラストマー組成物、ならびに該組成物からなる成形品を提供する。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)