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1. (WO2004082820) PROCESSING SYSTEM AND METHOD FOR CHEMICALLY TREATING A SUBSTRATE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2004/082820 International Application No.: PCT/US2004/007864
Publication Date: 30.09.2004 International Filing Date: 16.03.2004
IPC:
C23C 16/44 (2006.01) ,C25D 11/02 (2006.01) ,H01L 21/00 (2006.01) ,H01L 21/677 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
C CHEMISTRY; METALLURGY
25
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
D
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
11
Electrolytic coating by surface reaction, i.e. forming conversion layers
02
Anodisation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
677
for conveying, e.g. between different work stations
Applicants:
TOKYO ELECTRON LIMITED [JP/JP]; TBS Broadcast Center 3-6, Akasak 5-chome Minato-ku Tokyo 107, JP (AllExceptUS)
HAMELIN, Thomas [US/US]; US (UsOnly)
WALLACE, Jay [US/US]; US (UsOnly)
LAFLAMME, Arthur, H., Jr. [US/US]; US (UsOnly)
Inventors:
HAMELIN, Thomas; US
WALLACE, Jay; US
LAFLAMME, Arthur, H., Jr.; US
Agent:
LAZAR, Dale, S. ; Pillsbury Winthrop LLP P.O. Box 10500 McLean, VA 22102, US
Priority Data:
60/454,64217.03.2003US
Title (EN) PROCESSING SYSTEM AND METHOD FOR CHEMICALLY TREATING A SUBSTRATE
(FR) SYSTEME ET PROCEDE DE TRAITEMENT CHIMIQUE D'UN SUBSTRAT
Abstract:
(EN) A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate holder is thermally insulated from the chemical treatment chamber. The substrate is exposed to a gaseous chemistry, without plasma, under controlled conditions including wall temperature, surface temperature and gas pressure. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate.
(FR) Cette invention a trait à un système et à un procédé de traitement chimique d'un substrat. Le système de traitement comporte une enceinte de traitement chimique à température régulée et un support de substrat à température régulée indépendant permettant de maintenir un substrat à soumettre à un traitement chimique. Ce support est isolé thermiquement de l'enceinte de traitement chimique. Le substrat est soumis à un traitement chimique par gaz, sans plasma, dans des conditions maîtrisées de température de paroi, de température de surface et de pression de gaz. Le traitement de ce substrat modifie chimiquement les surfaces à découvert du substrat.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP1604388JP2006521017JP2011009777JP2012209574