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Pub. No.:    WO/2004/036657    International Application No.:    PCT/JP2003/013074
Publication Date: 29.04.2004 International Filing Date: 10.10.2003
Chapter 2 Demand Filed:    30.04.2004    
C30B 11/00 (2006.01)
Applicants: CANON KABUSHIKI KAISHA [JP/JP]; 3-30-2, Shimomaruko, Ohta-ku, Tokyo 146-8501 (JP) (For All Designated States Except US).
ISHIHARA, Shunichi [JP/JP]; (JP) (For US Only).
NAKAGAWA, Katsumi [JP/JP]; (JP) (For US Only).
SATO, Hiroshi [JP/JP]; (JP) (For US Only).
YOSHINO, Takehito [JP/JP]; (JP) (For US Only).
NISHIDA, Shoji [JP/JP]; (JP) (For US Only).
UKIYO, Noritaka [JP/JP]; (JP) (For US Only).
IWANE, Masaaki [JP/JP]; (JP) (For US Only).
IWASAKI, Yukiko [JP/JP]; (JP) (For US Only).
MIZUTANI, Masaki [JP/JP]; (JP) (For US Only)
Inventors: ISHIHARA, Shunichi; (JP).
NAKAGAWA, Katsumi; (JP).
SATO, Hiroshi; (JP).
YOSHINO, Takehito; (JP).
NISHIDA, Shoji; (JP).
UKIYO, Noritaka; (JP).
IWANE, Masaaki; (JP).
IWASAKI, Yukiko; (JP).
MIZUTANI, Masaki; (JP)
Agent: OKABE, Masao; No. 602, Fuji Bldg., 2-3, Marunouchi 3-chome, Chiyoda-ku, Tokyo 100-0005 (JP)
Priority Data:
NO. 2002-302286 16.10.2002 JP
Abstract: front page image
(EN)A polycrystalline silicon substrate for a solar cell formed by growing a high purity polycrystalline silicon layer on a surface of a base obtained by slicing a polycrystalline silicon ingot obtained by melting metallurgical grade silicon and performing one-direction solidification, wherein one-direction solidification is performed on a melt prepared by adding B to molten metallurgical grade silicon at an amount of 2 x 10¿18? cm¿-3? to 5 x 10¿19? cm¿-3? based on the concentration in the melt to produce the polycrystalline silicon ingot. With this structure, it is possible to easily obtain a polycrystalline silicon substrate having resistivity and the type of conductivity suitable for manufacture of a solar cell.
(FR)On obtient ce substrat au silicium polycristallin pour cellules solaires en faisant croître une couche de silicium polycristallin d'une grande pureté à la surface d'une assise obtenue par la découpe en tranches d'un lingot de silicium polycristallin obtenu par fusion de silicium métallurgique et solidification dans une seule direction. On obtient cette solidification sur un matériau en fusion préparé par ajout de B à du silicium métallurgique fondu selon une quantité comprise entre 2 x 1018 cm-3 et 5 x 1019 cm-3 basée sur une certaine concentration dans le matériau en fusion et ce, afin de produire le lingot de silicium polycristallin. Il est possible, grâce à cette structure, de produire un substrat au silicium polycristallin dont la résistivité et le type de conductivité conviennent à la fabrication de cellules solaires.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)