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Machine translation
1. (WO2004032220) METHOD FOR REDUCING WAFER ARCING
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/032220    International Application No.:    PCT/US2003/030605
Publication Date: 15.04.2004 International Filing Date: 24.09.2003
IPC:
H01L 21/00 (2006.01), H01L 21/311 (2006.01), H01L 21/683 (2006.01)
Applicants: LAM RESEARCH COPORATION [US/US]; 4650 Cushing Parkway, Fremont, CA 94538 (US) (For All Designated States Except US).
FISCHER, Andreas [DE/US]; (US) (For US Only)
Inventors: FISCHER, Andreas; (US)
Agent: LEAVELL, George, B.; Martine & Penilla, LLP, 710 Lakeway Drive #170, Sunnyvale, CA 94086 (US)
Priority Data:
10/261,403 30.09.2002 US
Title (EN) METHOD FOR REDUCING WAFER ARCING
(FR) METHODE PERMETTANT DE REDUIRE LA FORMATION D'ETINCELLES SUR UNE PLAQUETTE
Abstract: front page image
(EN)A method for reducing wafer damage during an etching process is provided. In one of the many embodiments, the method includes assigning a bias voltage to each of at least one etching process, and generating the assigned bias voltage before initiation of one of the at least one etching process. The method further includes applying the assigned bias voltage to an electrostatic chuck before initiation of one of the at least one etching processes. The assigned bias voltage level reduces wafer arcing.
(FR)L'invention concerne une méthode permettant de réduire les dommages subits par une plaquette lors d'un procédé de gravure. Dans l'un des nombreux modes de réalisation de l'invention, cette méthode consiste à attribuer une tension polarisée à chaque procédé de gravure, et à générer la tension polarisée attribuée avant de commencer ledit procédé de gravure. Le procédé consiste également à appliquer la tension polarisée attribuée à un mandrin électrostatique avant de commencer le procédé de gravure. Le niveau de tension polarisée attribuée permet de réduire la formation d'étincelles sur la plaquette.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)