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1. (WO2004032196) METHOD OF FABRICATING SEMICONDUCTOR BY NITROGEN DOPING OF SILICON FILM
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/032196    International Application No.:    PCT/US2003/031217
Publication Date: 15.04.2004 International Filing Date: 03.10.2003
IPC:
C23C 16/24 (2006.01), H01L 21/205 (2006.01)
Applicants: PAN JIT AMERICAS, INC. [US/US]; 1702 West 3rd Street, Tempe, AZ 85281 (US) (For All Designated States Except US).
KOUNTZ, Michael [US/US]; (US) (For US Only).
ENGLE, George [US/US]; (US) (For US Only).
EVERS, Steven [US/US]; (US) (For US Only)
Inventors: KOUNTZ, Michael; (US).
ENGLE, George; (US).
EVERS, Steven; (US)
Agent: DOWELL, Ralph, A.; Dowell & Dowell, P.C., Suite 309, 1215 Jefferson Davis Highway, Arlington, VA 22202 (US)
Priority Data:
60/415,516 03.10.2002 US
Title (EN) METHOD OF FABRICATING SEMICONDUCTOR BY NITROGEN DOPING OF SILICON FILM
(FR) PROCEDE DE FABRICATION DE SEMI-CONDUCTEUR PAR DOPAGE A L'AZOTE D'UN FILM DE SILICIUM
Abstract: front page image
(EN)A method of fabricating a semiconductor uses chemical vapor deposition, or plasma-enhanced chemical vapor deposition, to deposit an amorphous silicon film on an exposed surface of a substrate (56), such as ASIC wafer. The amorphous silicon film is doped with nitrogen to reduce the conductivity of the film and/or augment the breakdown voltage of the film. Nitrogen gas, N2, (52) is activated or ionized in a reactor (10) before it is deposited on the substrate.
(FR)La présente invention concerne un procédé de fabrication de semi-conducteur utilisant le dépôt chimique en phase vapeur, éventuellement renforcé par plasma, pour déposer un film de silicium amorphe sur une surface exposée d'un substrat tel qu'une micro-plaquette de circuit intégré spécifique (ASIC). Le film de silicium amorphe est dopé avec de l'azote de façon à réduire la conductivité du film et/ou augmenter la tension de claquage du film. De l'azote gazeux (N2) est activé ou ionisé dans un réacteur avant son dépôt sur le substrat.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)