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1. (WO2004032143) VOLTAGE GENERATION CIRCUITRY HAVING TEMPERATURE COMPENSATION

Pub. No.:    WO/2004/032143    International Application No.:    PCT/US2003/031140
Publication Date: Apr 15, 2004 International Filing Date: Sep 30, 2003
IPC: G11C 5/14
G11C 11/56
G11C 16/12
Applicants: SANDISK CORPORATION
WANG, Yongliang
CERNEA, Raul, A.
WANG, Chi-Ming
Inventors: WANG, Yongliang
CERNEA, Raul, A.
WANG, Chi-Ming
Title: VOLTAGE GENERATION CIRCUITRY HAVING TEMPERATURE COMPENSATION
Abstract:
Techniques for producing and utilizing temperature compensated voltages to accurately read signals (e.g., voltages) representing data stored in memory cells of a memory system are disclosed. The memory system is, for example, a memory card. The magnitude of the temperature compensation can be varied or controlled in accordance with a temperature coefficient. These techniques are particularly well suited for used with memory cells that provide multiple levels of storage.