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1. (WO2004031858) RESIST SYSTEM, USE OF A RESIST SYSTEM AND LITHOGRAPHY METHOD FOR THE PRODUCTION OF SEMICONDUCTOR ELEMENTS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2004/031858 International Application No.: PCT/DE2003/003178
Publication Date: 15.04.2004 International Filing Date: 19.09.2003
Chapter 2 Demand Filed: 29.04.2004
IPC:
G03F 7/004 (2006.01) ,G03F 7/039 (2006.01) ,G03F 7/20 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
04
Chromates
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
039
Macromolecular compounds which are photodegradable, e.g. positive electron resists
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
Applicants:
DOMKE, Wolf-Dieter [DE/DE]; DE (UsOnly)
KIRCH, Oliver [DE/DE]; DE (UsOnly)
KRAGLER, Karl [DE/DE]; DE (UsOnly)
LOWACK, Klaus [DE/DE]; DE (UsOnly)
INFINEON TECHNOLOGIES AG [DE/DE]; St.-Martin-Str. 53 81669 München, DE (AllExceptUS)
Inventors:
DOMKE, Wolf-Dieter; DE
KIRCH, Oliver; DE
KRAGLER, Karl; DE
LOWACK, Klaus; DE
Agent:
MÜLLER, Wolfram H.; Patentanwälte Maikowski & Ninnemann Postfach 15 09 20 10671 Berlin, DE
Priority Data:
102 46 546.030.09.2002DE
Title (EN) RESIST SYSTEM, USE OF A RESIST SYSTEM AND LITHOGRAPHY METHOD FOR THE PRODUCTION OF SEMICONDUCTOR ELEMENTS
(FR) SYSTEME DE RESERVE, UTILISATION D'UN SYSTEME DE RESERVE ET PROCEDE DE LITHOGRAPHIE DESTINE A LA FABRICATION DE COMPOSANTS A SEMICONDUCTEURS
(DE) RESISTSYSTEM, VERWENDUNG EINES RESISTSYSTEMS UND LITHOGRAPHIEVERFAHREN ZUR HERSTELLUNG VON HALBLEITERBAUELEMENTEN
Abstract:
(EN) The invention relates to a resist system for lithography methods for the production of semiconductor components at wavelengths of 0.1 -150 nm, characterised by at least one polymer or copolymer comprising at least one acid-labile group. The invention also relates to the use of a resist system and a lithography method, whereby it is possible to obtain high sensitivity, especially in the EUV range, and no limitation of the process window occurs by undesirable cross-linking in the resist system, even at high doses of exposure.
(FR) L'invention concerne un système de réserve conçu pour des procédés de lithographie destinés à la fabrication d'éléments à semiconducteurs, à des longueurs d'onde de 0,1 à 150 nm. Ledit système de réserve est caractérisé en ce qu'il contient au moins un polymère ou copolymère comportant au moins un groupe instable à l'acide. L'invention concerne également l'utilisation d'un tel système de réserve ainsi qu'un procédé de lithographie. Selon l'invention, il est possible d'obtenir une sensibilité élevée, notamment dans le domaine des ultraviolets extrêmes, et d'éliminer toute réduction de la fenêtre de traitement due à une réticulation transversale non souhaitée dans le système de réserve, en cas d'exposition importante.
(DE) Die Erfindung betrifft ein Resistsystem für Lithographieverfahren für die Herstellung von Halbleiterbauelementen bei Wellenlängen im Bereich von 0,1 bis 150 nm, gekennzeichnet durch mindestens ein Polymer oder Copolymer mit mindestens einer säurelabile Gruppen. Ferner betrifft die Erfindung eine Verwendung des Resistsystems sowie ein Lithographieverfahren. Damit ist es möglich, insbesondere im EUV-Bereich eine hohe Empfindlichkeit zur Verfügung zu stellen, wobei gleichzeitig aber auch bei hohen Belichtungsdosen keine Einschränkung des Prozessfensters durch unerwünschte Quervernetzung im Resistsystem eintritt.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, OM, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)