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1. (WO2004030169) SPECTROSCOPIC CATHETER SYSTEM WITH WIDELY TUNABLE SOURCE AND METHOD OF OPERATION
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/030169    International Application No.:    PCT/US2003/028763
Publication Date: 08.04.2004 International Filing Date: 12.09.2003
IPC:
A61B 5/00 (2006.01), H01S 5/0683 (2006.01), H01S 5/0687 (2006.01), H01S 5/14 (2006.01), H01S 5/40 (2006.01)
Applicants: INFRAREDX, INC. [US/US]; 125 CambridgePark Drive, Cambridge, MA 02140 (US) (For All Designated States Except US).
KORN, A., Jeffrey [US/US]; (US) (For US Only)
Inventors: KORN, A., Jeffrey; (US)
Agent: HOUSTON, Grant, J.,; Houston Eliseeva LLP, 4 Militia Drive, Ste. 4, Lexington, MA 02421 (US)
Priority Data:
10/259,076 27.09.2002 US
Title (EN) SPECTROSCOPIC CATHETER SYSTEM WITH WIDELY TUNABLE SOURCE AND METHOD OF OPERATION
(FR) SYSTEME CATHETER SPECTROSCOPIQUE PRESENTANT UNE SOURCE LARGEMENT ACCORDABLE ET SON PROCEDE DE FONCTIONNEMENT
Abstract: front page image
(EN)A laser system for a spectroscopic catheter system uses multiple semiconductor gain media having gain peaks at different wavelengths. The output from the gain media is preferably coupled into single-mode fiber using conventional opto-electronic packaging techniques. As a result, the laser oscillator source has a spectral output that is wider than the gain bandwidth of a single medium to enable it to access the entire spectrum of interest, which is presently in the near infrared. Moreover, the semiconductor gain media can be packaged in a stable and controlled environment for long-term performance.
(FR)L'invention concerne un système laser pour un système cathéter spectroscopique utilisant de multiples supports de gain semi-conducteur ayant des pics de gain à différentes longueurs d'ondes. La sortie du support de gain est de préférence couplée à une fibre mode simple à l'aide de techniques d'emballage optoélectronique conventionnelles. Ainsi, la source de l'oscillateur laser présente une sortie spectrale plus large que la largeur de bande de gain d'un support simple afin de permettre l'accès au spectre entier d'intérêt qui se trouve dans l'infrarouge proche. Par ailleurs, les supports de gain semi-conducteur peuvent être emballés dans un environnement stable et commandés en vue de performances sur le long terme.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)