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Machine translation
1. (WO2004030036) A MODULAR BIPOLAR-CMOS-DMOS ANALOG INTEGRATED CIRCUIT AND POWER TRANSISTOR TECHNOLOGY
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/030036    International Application No.:    PCT/US2003/029865
Publication Date: 08.04.2004 International Filing Date: 19.09.2003
IPC:
H01L 27/082 (2006.01), H01L 27/088 (2006.01), H01L 27/092 (2006.01), H01L 27/102 (2006.01), H01L 27/105 (2006.01), H01L 21/76 (2006.01), H01L 21/761 (2006.01)
Applicants: ADVANCED ANALOGIC TECHNOLOGIES, INC. [US/US]; 830 E. Arques Avenue, Sunnyvale, CA 94085-4519 (US)
Inventors: WILLIAMS, Richard, K.; (US).
CORNELL, Michael, E.; (US).
CHAN, Wai, Tien; (CN)
Agent: STEUBER, David, E.; Silicon Valley Patent Group LLP, 2350 Mission College Boulevard, Suite 360, Santa Clara, CA 95054 (US)
Priority Data:
10/262,567 29.09.2002 US
Title (EN) A MODULAR BIPOLAR-CMOS-DMOS ANALOG INTEGRATED CIRCUIT AND POWER TRANSISTOR TECHNOLOGY
(FR) TECHNIQUE DE FABRICATION DE CIRCUITS INTEGRES ANALOGIQUES CMOS-DMOS BIPOLAIRES MODULAIRES ET DE TRANSISTORS DE PUISSANCE
Abstract: front page image
(EN)A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each of the devices is extremely compact, both laterally and vertically, and can be fully isolated from all other devices in the substrate.
(FR)Une famille de dispositifs à semi-conducteurs est formée dans un substrat ne contenant pas de couche épitaxiale. Dans un mode de réalisation, ladite famille comprend une paire CMOS 5V, une paire CMOS 12V, un transistor NPN 5V, un transistor PNP 5V, plusieurs formes de MOSFET à tranchée latérale, et un DMOS à canal N latéral 30V. Chaque dispositif est extrêmement compact, à la fois latéralement et verticalement, et peut être intégralement isolé des autres dispositifs du substrat.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)