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1. (WO2004027852) METHOD FOR FORMING INSULATING FILM ON SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE-PROCESSING APPARATUS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/027852    International Application No.:    PCT/JP2003/011971
Publication Date: 01.04.2004 International Filing Date: 19.09.2003
Chapter 2 Demand Filed:    04.02.2004    
IPC:
H01L 21/00 (2006.01), H01L 21/314 (2006.01)
Applicants: TOKYO ELECTRON LIMITED [JP/JP]; 3-6, Akasaka 5-Chome, Minato-Ku, Tokyo 107-8481 (JP) (For All Designated States Except US).
IGETA, Masanobu [JP/JP]; (JP) (For US Only).
AOYAMA, Shintaro [JP/JP]; (JP) (For US Only).
SHINRIKI, Hiroshi [JP/JP]; (JP) (For US Only)
Inventors: IGETA, Masanobu; (JP).
AOYAMA, Shintaro; (JP).
SHINRIKI, Hiroshi; (JP)
Agent: ITOH, Tadahiko; 32nd Floor, Yebisu Garden Place Tower, 20-3, Ebisu 4-chome, Shibuya-ku, Tokyo 150-6032 (JP)
Priority Data:
2002-273709 19.09.2002 JP
Title (EN) METHOD FOR FORMING INSULATING FILM ON SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE-PROCESSING APPARATUS
(FR) PROCEDE DE FORMATION D'UN FILM ISOLANT SUR UN SUBSTRAT, PROCEDE DE FABRICATION DE DISPOSITIF SEMI-CONDUCTEUR ET APPAREIL DE TRAITEMENT DE SUBSTRAT
(JA) 基板上への絶縁膜の形成方法、半導体装置の製造方法、および基板処理装置
Abstract: front page image
(EN)A substrate-processing apparatus (100, 40) comprises a radical-forming unit (26) for forming nitrogen radicals and oxygen radicals through a high-frequency plasma, a processing vessel (21) in which a substrate (W) to be processed is held, and a gas-supplying unit (30) which is connected to the radical-forming unit. The gas-supplying unit (30) controls the mixture ratio between a first raw material gas containing nitrogen and a second raw material gas containing oxygen, and supplies a mixture gas of a desired mixture ratio to the radical-forming unit. By supplying nitrogen radicals and oxygen radicals mixed at the controlled mixture ratio to the surface of the substrate, an insulating film having a desired nitrogen concentration is formed on the surface of the substrate.
(FR)L'invention concerne un appareil de traitement de substrat (100, 40) comprenant une unité de formation de radicaux (26) destinée à former des radicaux d'azote et d'oxygène via un plasma haute fréquence, une enceinte de traitement (1) dans laquelle est maintenu un substrat (W) à traiter, et une unité d'alimentation de gaz (30) connectée à l'unité de formation de radicaux. L'unité d'alimentation en gaz (30) régule le rapport de mélange entre un premier gaz contenant de l'azote et un second gaz contenant de l'oxygène, et alimente l'unité de formation de radicaux en un rapport de mélange recherché. L'envoi de radicaux mélangés d'azote et d'oxygène, selon le rapport de mélange, permet de former, sur la surface du substrat, un film isolant à teneur en azote recherchée.
(JA)基板処理装置(100、40)は、高周波プラズマにより窒素ラジカルと酸素ラジカルを形成するラジカル形成部(26)と、被処理基板Wを保持する処理容器(21)と、ラジカル形成部に接続されて窒素を含む第1の原料ガスと、酸素を含む第2の原料ガスの混合比を制御して、所望の混合比の混合ガスをラジカル形成部に供給するガス供給部(30)とを備える。混合比が制御された窒素ラジカルと酸素ラジカルを被処理基板表面に供給することにより、被処理基板表面に所望の窒素濃度で絶縁膜を形成する。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NI, NO, NZ, OM, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)