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1. WO2004025731 - METHOD FOR THE PRODUCTION OF SONOS MEMORY CELLS, SONOS MEMORY CELL, AND MEMORY CELL FIELD

Publication Number WO/2004/025731
Publication Date 25.03.2004
International Application No. PCT/DE2003/002576
International Filing Date 31.07.2003
Chapter 2 Demand Filed 30.03.2004
IPC
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 21/8246 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8239Memory structures
8246Read-only memory structures (ROM)
H01L 27/115 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
H01L 29/792 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
792with charge trapping gate insulator, e.g. MNOS-memory transistor
CPC
H01L 27/115
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
H01L 27/11568
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11563with charge-trapping gate insulators, e.g. MNOS or NROM
11568characterised by the memory core region
H01L 29/40117
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
401Multistep manufacturing processes
4011for data storage electrodes
40117the electrodes comprising a charge-trapping insulator
H01L 29/66833
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66833with a charge trapping gate insulator, e.g. MNOS transistors
H01L 29/792
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
792with charge trapping gate insulator, e.g. MNOS-memory transistors
H01L 29/7926
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
792with charge trapping gate insulator, e.g. MNOS-memory transistors
7926Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
Applicants
  • INFINEON TECHNOLOGIES AG [DE]/[DE] (AllExceptUS)
  • INFINEON TECHNOLOGIES FLASH GMBH & CO. KG [DE]/[DE] (AllExceptUS)
  • DEPPE, Joachim [DE]/[DE] (UsOnly)
  • LUDWIG, Christoph [DE]/[DE] (UsOnly)
  • KLEINT, Christoph [DE]/[DE] (UsOnly)
  • WILLER, Josef [DE]/[DE] (UsOnly)
Inventors
  • DEPPE, Joachim
  • LUDWIG, Christoph
  • KLEINT, Christoph
  • WILLER, Josef
Agents
  • EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH
Priority Data
102 40 893.904.09.2002DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) VERFAHREN ZUR HERSTELLUNG VON SONOS-SPEICHERZELLEN, SONOS-SPEICHERZELLE UND SPEICHERZELLENFELD
(EN) METHOD FOR THE PRODUCTION OF SONOS MEMORY CELLS, SONOS MEMORY CELL, AND MEMORY CELL FIELD
(FR) PROCEDE POUR FABRIQUER DES CELLULES MEMOIRES SONOS, CELLULE MEMOIRE SONOS ET CHAMP DE CELLULES MEMOIRES
Abstract
(DE)
In einem Si-Körper (1) wird ein Graben (2) hergestellt, dessen Wände (4) mit einer Stickstoffimplantierung (6) versehen werden. Eine Oxidschicht zwischen den Source-/Drain-Bereichen (5) und einer auf der Oberseite aufgebrachten Wortleitung wächst dicker auf als eine untere Oxidschicht einer als Gate-Dielektrikum an der Grabenwand hergestellte ONO-Speicherschicht. Statt der Stickstoffimplantierung in die Grabenwände kann eine Metallsilizidschicht auf den Oberseiten der Source-/Drain-Bereiche hergestellt werden, um das Oxidwachstum dort zu beschleunigen.
(EN)
Disclosed is an Si body (1) in which a ditch (2) is created, the walls (4) of said ditch (2) being provided with a nitrogen implant (6). An oxide layer which is disposed between the source/drain areas (5) and a word line that is applied to the upper face grows thicker than a lower oxide layer of an ONO storage layer that is created on the ditch wall as a gate dielectric. A metal silicide layer can be created on the upper faces of the source/drain areas instead of the nitrogen implant in the ditch walls in order to accelerate oxide growth there.
(FR)
Dans un élément en silicium (1) est façonné un puits (2) dont les parois (4) sont dotées d'une implantation d'azote (6). Une couche d'oxyde située entre les zones source/drain (5) et un canal mots disposé sur la face supérieure croît plus en volume qu'une couche d'oxyde inférieure d'une couche de mémoire ONO fonctionnant comme diélectrique de grille sur la paroi du puits. A la place d'une implantation d'azote dans les parois du puits, une couche de siliciure de métal peut être façonnée sur les faces supérieures des zones source/drain pour accélérer la croissance de l'oxyde à ces emplacements.
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