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1. WO2004025730 - SEMICONDUCTOR DEVICE AND MEMORY CARD USING SAME

Publication Number WO/2004/025730
Publication Date 25.03.2004
International Application No. PCT/JP2003/010178
International Filing Date 08.08.2003
Chapter 2 Demand Filed 08.08.2003
IPC
H01L 27/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
H01L 27/08 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
CPC
G11C 5/147
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
5Details of stores covered by G11C11/00
14Power supply arrangements
147Voltage reference generators, voltage and current regulators
H01L 27/0688
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
0688Integrated circuits having a three-dimensional layout
H01L 27/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
H02M 2001/007
HELECTRICITY
02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
1Details of apparatus for conversion
0067Converter structures employing plural converter units, other than for parallel operation of the units on a single load
007Plural converter units in cascade
H02M 3/156
HELECTRICITY
02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
3Conversion of dc power input into dc power output
02without intermediate conversion into ac
04by static converters
10using discharge tubes with control electrode or semiconductor devices with control electrode
145using devices of a triode or transistor type requiring continuous application of a control signal
155using semiconductor devices only
156with automatic control of output voltage or current, e.g. switching regulators
Applicants
  • RENESAS TECHNOLOGY CORP. [JP]/[JP] (AllExceptUS)
  • KIKUCHI, Mutsumi [JP]/[JP] (UsOnly)
  • AKIYAMA, Noboru [JP]/[JP] (UsOnly)
  • SHOJI, Hiroyuki [JP]/[JP] (UsOnly)
  • MURABAYASHI, Fumio [JP]/[JP] (UsOnly)
  • KANODA, Akihiko [JP]/[JP] (UsOnly)
  • SASE, Takashi [JP]/[JP] (UsOnly)
  • TATENO, Koji [JP]/[JP] (UsOnly)
Inventors
  • KIKUCHI, Mutsumi
  • AKIYAMA, Noboru
  • SHOJI, Hiroyuki
  • MURABAYASHI, Fumio
  • KANODA, Akihiko
  • SASE, Takashi
  • TATENO, Koji
Agents
  • OGAWA, Katsuo
Priority Data
2002-23390909.08.2002JP
2002-27425520.09.2002JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND MEMORY CARD USING SAME
(FR) DISPOSITIF SEMI-CONDUCTEUR ET CARTE A MEMOIRE DOTE DE CE DISPOSITIF
(JA) 半導体装置およびそれを用いたメモリカード
Abstract
(EN)
A semiconductor device that is small in size without marring the efficiency of the power supply and produces reduced noise in switching and a memory card are disclosed. The semiconductor device comprises step-up circuits connected into multistage for stepping up the power supply voltage to a predetermined final output voltage, a voltage control section for controlling the output voltage at the final stage or at a stage near the final stage, and an internal device to which the final output voltage is applied. The initial stage primary step-up circuit has an inductance element, a switching element, a diode, and a drive circuit. A metal coil section of the inductance element includes a metal wiring formed at the step of fabricating the semiconductor integrated circuit, and a core section includes an insulating film between wiring layers. The insulating film is formed at the same step of fabricating the semiconductor integrated circuit. The switching element and a part of the diode are disposed below the inductance element.
(FR)
Cette invention concerne un dispositif semi-conducteur de faible taille, ne compromettant pas l'efficacité de l'alimentation électrique, et dont la commutation produit un bruit réduit, ainsi qu'une carte à mémoire. Le dispositif semi-conducteur comprend: des circuits survolteurs connectés de manière multiétagée, qui augmentent la tension d'alimentation jusqu'à une valeur de sortie finale prédéterminée; une partie de régulation de la tension qui régule la tension de sortie au stade final ou à un niveau proche du stade final; et un dispositif interne auquel est appliqué la tension finale de sortie. Le circuit de survoltage primaire de stade initial possède un élément d'induction, un élément de commutation, une diode et un circuit d'attaque. Une partie à enroulement métallique de l'élément d'induction comprend un bobinage métallique formé au cours de l'étape de fabrication du circuit intégré à semi-conducteur, et une partie noyau comprenant un film isolant disposé entre les couches d'enroulement. La fabrication du film isolant se fait en même temps que celle du circuit intégré à semi-conducteur. L'élément de commutation et une partie de la diode sont disposés sous l'élément d'induction.
(JA)
電源の効率を下げずに小型化が図れ、スイッチング時のノイズを低減できる半導体装置及びそれを用いたメモリカードであって、電源電圧を所定の最終出力電圧まで昇圧する複数段の昇圧回路群と、最終段付近の出力電圧を制御する電圧制御部と、最終出力電圧が供給される内部素子とを備え、最初段の1次昇圧回路は、インダクタンス素子と、スイッチング素子と、ダイオードと、駆動回路とを備え、インダクタンス素子の金属コイル部には半導体集積回路の形成工程を利用して形成した金属配線を、コア部には前記形成工程を利用して形成した配線層間絶縁膜を用いる。また、スイッチング素子とダイオードの一部をインダクタンス素子の下方に配置する構成とする。
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