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1. WO2004025715 - METHOD FOR PRODUCTION OF A LAYERED STRUCTURE WITH NANOCRYSTALS IN A DIELECTRIC LAYER

Publication Number WO/2004/025715
Publication Date 25.03.2004
International Application No. PCT/DK2003/000527
International Filing Date 08.08.2003
IPC
H01L 21/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/28 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
H01L 21/3105 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105After-treatment
H01L 21/316 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
316composed of oxides or glassy oxides or oxide-based glass
H01L 29/423 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
H01L 21/02164
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
02164the material being a silicon oxide, e.g. SiO2
H01L 21/02178
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02172the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
02175characterised by the metal
02178the material containing aluminium, e.g. Al2O3
H01L 21/02181
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02172the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
02175characterised by the metal
02181the material containing hafnium, e.g. HfO2
H01L 21/02189
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02172the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
02175characterised by the metal
02189the material containing zirconium, e.g. ZrO2
H01L 21/02192
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02172the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
02175characterised by the metal
02192the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
Applicants
  • AARHUS UNIVERSITET [DK]/[DK] (AllExceptUS)
  • NYLANDSTED LARSEN, Arne [DK]/[DK] (UsOnly)
  • LUNDSGAARD HANSEN, John [DK]/[DK] (UsOnly)
  • GAIDUK, Peter [DK]/[DK] (UsOnly)
  • HEINIG, Karl-Heinz [DE]/[DE] (UsOnly)
Inventors
  • NYLANDSTED LARSEN, Arne
  • LUNDSGAARD HANSEN, John
  • GAIDUK, Peter
  • HEINIG, Karl-Heinz
Agents
  • PATRADE A/S
Priority Data
02018065.913.08.2002EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD FOR PRODUCTION OF A LAYERED STRUCTURE WITH NANOCRYSTALS IN A DIELECTRIC LAYER
(FR) PROCEDE DE PRODUCTION D'UNE STRUCTURE A COUCHES COMPRENANT DES NANOCRISTAUX DANS UNE COUCHE DIELECTRIQUE
Abstract
(EN)
A method for production of a sandwich layered structure with nanocrystals in a dielectric layer for application in a memory device. The method comprises -providing on a substrate a first layer of a first dielectric, providing on top of the first layer a second layer made of a first semiconductor, providing on top of the second layer a further layer made of a second dielectric, and thermal treatment in a nonreactive or reducing gas atmosphere at a temperature suitable for production of nanocrystals made of the first semiconductor. The second layer is provided by deposition of the first semiconductor using molecular beam epitaxy or chemical vapour deposition under high vacuum conditions, preferably less than 1.3 µPa (10-8 Torr).
(FR)
L'invention concerne un procédé de production d'une structure à couches de type sandwich comprenant des nanocristaux dans une couche diélectrique à appliquer à un dispositif de mémoire. Ce procédé consiste à produire une première couche d'un premier diélectrique sur un substrat, à produire une deuxième couche constituée d'un premier semiconducteur sur la première couche, à produire une autre couche constituée d'un second diélectrique sur la deuxième couche et à produire des nanocristaux constitués du premier semiconducteur par traitement thermique dans une atmosphère de gaz non réactif ou de réduction à une température appropriée. La deuxième couche est obtenue par déposition du premier semiconducteur au moyen d'une épitaxie de faisceau moléculaire ou d'une déposition de vapeur chimique dans des conditions de vide élevées, de préférence inférieures à 10-8 Torr.
Also published as
Latest bibliographic data on file with the International Bureau