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1. WO2004024980 - ORGANIC COMPOUND FOR CVD RAW MATERIAL AND PROCESS FOR PRODUCING THIN FILM OF METAL OR METAL COMPOUND WITH THE USE OF ORGANIC COMPOUND

Publication Number WO/2004/024980
Publication Date 25.03.2004
International Application No. PCT/JP2003/009861
International Filing Date 04.08.2003
IPC
C07C 49/92 2006.01
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
CACYCLIC OR CARBOCYCLIC COMPOUNDS
49Ketones; Ketenes; Dimeric ketenes; Ketonic chelates
92Ketonic chelates
C23C 16/18 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
06characterised by the deposition of metallic material
18from metallo-organic compounds
CPC
C07C 49/92
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
CACYCLIC OR CARBOCYCLIC COMPOUNDS
49Ketones; Ketenes; Dimeric ketenes
92Ketonic chelates
C23C 16/18
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
06characterised by the deposition of metallic material
18from metallo-organic compounds
Y10T 428/31855
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
428Stock material or miscellaneous articles
31504Composite [nonstructural laminate]
31855Of addition polymer from unsaturated monomers
Applicants
  • TANAKA KIKINZOKU KOGYO K.K. [JP]/[JP] (AllExceptUS)
  • SAITO, Masayuki [JP]/[JP] (UsOnly)
Inventors
  • SAITO, Masayuki
Agents
  • TANAKA, Daisuke
Priority Data
2002-23027107.08.2002JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) ORGANIC COMPOUND FOR CVD RAW MATERIAL AND PROCESS FOR PRODUCING THIN FILM OF METAL OR METAL COMPOUND WITH THE USE OF ORGANIC COMPOUND
(FR) COMPOSE ORGANIQUE DESTINE A UNE MATIERE PREMIERE DE CVD ET PROCEDE DE PRODUCTION D'UNE COUCHE MINCE DE METAL OU DE COMPOSE METALLIQUE A PARTIR DU COMPOSE ORGANIQUE
(JA) CVD原料用の有機化合物及び該有機化合物を用いた金属又は金属化合物薄膜の製造方法
Abstract
(EN)
An organic compound for CVD raw material, comprising a first organometallic compound having a metal atom coordinating with ligands and, mixed therewith, at least one second organometallic compound comprising as a center atom the same metal atom as in the first organometallic compound, the center atom coordinating with different ligands, which second organometallic compound exhibits decomposition behavior different from that of the fist organometallic compound. In particular, raw material for CVD realizing characteristics of handling easiness and thin film adherence whose simultaneous achievement has been difficult can be produced by selecting a cyclopentadiene complex or derivative thereof as the first organometallic compound and selecting a &bgr;-diketonate compound as the second organometallic compound and by mixing these.
(FR)
L'invention concerne un composé organique destiné à une matière première de CVD, comprenant un premier composé organométallique contenant un atome métallique lié à des ligands et au moins un second composé organométallique mélangé au premier, dont l'atome central est identique à l'atome métallique du premier composé organométallique, l'atome central étant lié à différents ligands. Le second composé organométallique présente un coefficient de décomposition différent de celui du premier composé organométallique. Plus particulièrement, cette matière première pour CVD, présentant ces caractéristiques de maniabilité et d'adhérence de la couche mince en même temps, peut être produite selon un procédé consistant à sélectionner un complexe cyclopentadiène ou un dérivé de ce dernier comme premier composé organométallique et un composé $g(b)-dicétonate comme second composé organométallique, puis à mélanger ces composés.
(JA)
not available
Also published as
Latest bibliographic data on file with the International Bureau