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1. WO2004023568 - LIGHT-EMITTING DEVICE HAVING LIGHT-EMITTING ELEMENTS

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Publication Number WO/2004/023568
Publication Date 18.03.2004
International Application No. PCT/JP2003/010922
International Filing Date 28.08.2003
IPC
H01L 25/075 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/78
H01L 27/15 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/02 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
H01L 33/32 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
H01L 33/36 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
CPC
H01L 2224/24
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
18High density interconnect [HDI] connectors; Manufacturing methods related thereto
23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
24of an individual high density interconnect connector
H01L 27/15
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
H01L 27/153
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
153in a repetitive configuration, e.g. LED bars
H01L 27/156
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
153in a repetitive configuration, e.g. LED bars
156two-dimensional arrays
H01L 33/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
08with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
Applicants
  • NITRIDE SEMICONDUCTORS CO.,LTD. [JP]/[JP] (AllExceptUS)
  • SAKAI, Shiro [JP]/[JP]
  • AO, Jin-Ping [CN]/[JP] (UsOnly)
  • ONO, Yasuo [JP]/[JP] (UsOnly)
Inventors
  • SAKAI, Shiro
  • AO, Jin-Ping
  • ONO, Yasuo
Agents
  • YOSHIDA, Kenji
Priority Data
2002/24995729.08.2002JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) LIGHT-EMITTING DEVICE HAVING LIGHT-EMITTING ELEMENTS
(FR) DISPOSITIF ELECTROLUMINESCENT COMPRENANT DES ELEMENTS ELECTROLUMINESCENTS
(JA) 複数の発光素子を有する発光装置
front page image
Abstract
(EN)
A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.
(FR)
L'invention concerne un dispositif électroluminescent fonctionnant avec une tension de commande élevée et un faible courant de commande. Des DEL (1) sont formées de manière bidimensionnelle et monolithiquement sur un substrat isolant (10), tel que du saphir, et connectées en série de sorte à former un réseau de DEL. Deux de ces réseaux de DEL sont connectés à des électrodes (32) en parallèle inverse. Un câblage de pont aérien (28) est formé entre les DEL (1) et entre les DEL (1) et les électrodes (32). Les réseaux de DEL sont agencés en zigzag de manière à former une pluralité de DEL (1) permettant de produire une tension de commande élevée et un faible courant de commande. Deux réseaux de DEL sont connectés en parallèle inverse, une alimentation CA pouvant être utilisée comme alimentation électrique.
(JA)
高い駆動電圧及び低い駆動電流で動作する発光装置。サファイア等の絶縁基板（１０）上に複数のＬＥＤ（１）を二次元的にモノリシック形成し、複数のＬＥＤ（１）を直列接続してＬＥＤアレイとする。２組のＬＥＤアレイを互いに逆極性で電極（３２）に接続する。ＬＥＤ（１）の間及びＬＥＤ（１）と電極（３２）間はエアブリッジ配線（２８）とする。ＬＥＤアレイをシグザグ状に配置することで多数のＬＥＤ（１）を形成し、高い駆動電圧と低い駆動電流を得る。２つのＬＥＤアレイは逆極性であるため、電源として交流電源を使用できる。
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