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1. WO2004021398 - WAFER-LEVEL SEAL FOR NON-SILICON-BASED DEVICES

Publication Number WO/2004/021398
Publication Date 11.03.2004
International Application No. PCT/US2003/018103
International Filing Date 09.06.2003
IPC
B81B 7/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
7Microstructural systems
H03H 3/08 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
08for the manufacture of resonators or networks using surface acoustic waves
H03H 9/02 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02Details
CPC
B81C 1/00293
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
1Manufacture or treatment of devices or systems in or on a substrate
00015for manufacturing microsystems
00261Processes for packaging MEMS devices
00277for maintaining a controlled atmosphere inside of the cavity containing the MEMS
00293maintaining a controlled atmosphere with processes not provided for in B81C1/00285
B81C 2203/0136
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
2203Forming microstructural systems
01Packaging MEMS
0136Growing or depositing of a covering layer
H03H 3/08
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
08for the manufacture of resonators or networks using surface acoustic waves
H03H 9/02921
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
02535of surface acoustic wave devices
02818Means for compensation or elimination of undesirable effects
02921Measures for preventing electric discharge due to pyroelectricity
H03H 9/02984
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
02535of surface acoustic wave devices
02984Protection measures against damaging
H03H 9/1092
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
05Holders; Supports
10Mounting in enclosures
1064for surface acoustic wave [SAW] devices
1092the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
Applicants
  • SILICON LIGHT MACHINES CORPORATION [US]/[US]
Inventors
  • MILLER, Gregory, D.
  • BRUNER, Mike
  • RAGAN, Lawrence, H.
  • GREEN, Gary, W.
Agents
  • OKAMOTO, James, K.
Priority Data
10/231,35628.08.2002US
10/231,35728.08.2002US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) WAFER-LEVEL SEAL FOR NON-SILICON-BASED DEVICES
(FR) JOINT SITUE AU NIVEAU PLAQUETTE POUR DISPOSITIFS EXEMPTS DE SILICIUM
Abstract
(EN)
One embodiment disclosed relates to a method (100) for sealing an active area of a non-silicon-based device on a wafer. The method includes providing (104) a sacrificial material over at least the active area of the non-silicon-based device, depositing (108) a seal coating over the wafer so that the seal coating covers the sacrificial material, and replacing (112, 114) the sacrificial material with a target atmosphere. Another embodiment disclosed relates to an SAW device sealed at the wafer level (i.e. prior to separation of the die from the wafer). The device includes an active area to be protected, an electrical contact area (4), and a lithographically-formed structure (24) sealing at least the active area and leaving at least a portion of the electrical contact area (4) exposed.
(FR)
Dans un mode de réalisation, l'invention concerne un procédé (100) permettant d'étanchéifier une zone active d'un dispositif exempt de silicium sur une plaquette. Ledit procédé comprend : la mise à disposition (104) d'un matériau sacrificiel sur au moins la zone active du dispositif exempt de silicium ; l'application par dépôt (108) d'un revêtement d'étanchéité sur la plaquette, de sorte que le revêtement d'étanchéité recouvre le matériau sacrificiel, et le remplacement (112, 114) du matériau sacrificiel par une atmosphère cible. Dans un autre mode de réalisation, l'invention concerne un dispositif à onde acoustique de surface scellé au niveau de la plaquette (c.-à-d. avant la séparation du dé de la plaquette). Ledit dispositif comprend une zone active à protéger, une zone de contact électrique (4) et une structure obtenue par photolithographie (24) étanchéifiant au moins la zone active et laissant au moins un partie de la zone de contact électrique (4) dégagée.
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