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1. WO2004018743 - DIBORIDE SINGLE CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE USING THIS AND ITS MANUFACTURING METHOD

Publication Number WO/2004/018743
Publication Date 04.03.2004
International Application No. PCT/JP2003/010575
International Filing Date 21.08.2003
Chapter 2 Demand Filed 25.03.2004
IPC
C30B 29/10 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
C30B 33/00 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
33After-treatment of single crystals or homogeneous polycrystalline material with defined structure
H01L 29/04 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
04characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/24 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
24including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20 or H01L29/22246
H01S 5/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
H01S 5/323 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
32comprising PN junctions, e.g. hetero- or double- hetero-structures
323in AIIIBV compounds, e.g. AlGaAs-laser
CPC
C30B 29/10
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
C30B 33/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
33After-treatment of single crystals or homogeneous polycrystalline material with defined structure
H01L 21/0242
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
0242Crystalline insulating materials
H01L 21/02433
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
02433Crystal orientation
H01L 21/0254
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02538Group 13/15 materials
0254Nitrides
H01L 29/045
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
04characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
045by their particular orientation of crystalline planes
Applicants
  • NATIONAL INSTITUTE FOR MATERIALS SCIENCE [JP]/[JP] (AllExceptUS)
  • KYOCERA CORPORATION [JP]/[JP] (AllExceptUS)
  • OTANI, Shigeki [JP]/[JP] (UsOnly)
  • KINOSHITA, Hiroyuki [JP]/[JP] (UsOnly)
  • MATSUNAMI, Hiroyuki [JP]/[JP] (UsOnly)
  • SUDA, Jun [JP]/[JP] (UsOnly)
  • AMANO, Hiroshi [JP]/[JP] (UsOnly)
  • AKASAKI, Isamu [JP]/[JP] (UsOnly)
  • KAMIYAMA, Satoshi [JP]/[JP] (UsOnly)
Inventors
  • OTANI, Shigeki
  • KINOSHITA, Hiroyuki
  • MATSUNAMI, Hiroyuki
  • SUDA, Jun
  • AMANO, Hiroshi
  • AKASAKI, Isamu
  • KAMIYAMA, Satoshi
Agents
  • HIRAYAMA, Kazuyuki
Priority Data
2002-24489526.08.2002JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) DIBORIDE SINGLE CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE USING THIS AND ITS MANUFACTURING METHOD
(FR) SUBSTRAT MONOCRISTAL DE DIBORURE, COMPOSANT A SEMI-CONDUCTEUR LE METTANT EN APPLICATION ET SON PROCEDE DE FABRICATION
(JA) 二硼化物単結晶基板及びそれを用いた半導体装置並びにその製造方法
Abstract
(EN)
A single crystal substrate of a diboride having conductivity and the same cleavage surface as a nitride compound semiconductor, a semiconductor laser diode using the diboride single crystal substrate, a semiconductor device, and their manufacturing methods. The single crystal substrate (1) of diboride XB2 (where X is Zr or Ti) is characterized in that the surface orientation is the (0001) plane (2), and the substrate thickness is less than 0.1mm. The substrate is easy to cleave and dice along the (10-10) plane (4). By forming a nitride compound semiconductor laser diode on the substrate, a vertical structure element is realized. When the element is diced parallel to the (10-10) plane, the resonance plane of the semiconductor laser diode with reduced resonance loss can be formed. Thus, a manufacturing method without kerf loss is realized.
(FR)
Substrat monocristal de diborure dont la conductivité et la surface de clivage sont les mêmes que celles d'un semi-conducteur au composé de nitrure, diode laser à semi-conducteur utilisant ce substrat monocristal de diborure, composant à semi-conducteur et leurs procédés de fabrication. Ce substrat monocristal (1) de diborure XB2 (X représentant Zr ou Ti) présente, de façon caractéristique, une orientation de surface correspondant au plan (0001) (2) et l'épaisseur du substrat est inférieure à 0,1 mm. Il est facile de cliver et de quadriller ce substrat le long du plan (10-10) (4). La création d'une diode laser à semi-conducteur au composé de nitrure sur le substrat permet d'obtenir un élément de structure verticale. Quand cet élément est quadrillé parallèlement au plan (10-10), il est possible d'obtenir un plan de résonance dont la perte est réduite pour la diode laser à semi-conducteur. De ce fait, le procédé de fabrication est exempt de perte provoquée par des coupures.
(JA)
窒化物系化合物半導体の劈開面と同じ劈開面を有し、かつ、導電性を有する二硼化物単結晶基板と、それを用いた半導体レーザダイオード及び半導体装置、並びにそれらの製造方法であり、二硼化物XB2 (ここで、Xは、ZrまたはTi)の単結晶基板1であって、面方位が(0001)面2であり、かつ基板の厚さを0.1mm以下としたことを特徴とする。(10−10)面4に沿った劈開、分割を容易に行うことができる。この基板を用いて窒化物系化合物による半導体レーザダイオードなどを形成すれば縦構造素子が実現できる。素子を分割する際に(10−10)面に平行に分割することで、損失の少ない半導体レーザダイオードの共振面などを形成することができる。切りしろによるロスが無い製造方法を実現できる。
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