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Machine translation
1. (WO2004010475) METHOD OF REDUCING INTERNAL STRESS IN MATERIALS
Latest bibliographic data on file with the International Bureau   

IA Considered Withdrawn 2004-01-12 00:00:00.0


Pub. No.:    WO/2004/010475    International Application No.:    PCT/US2003/022846
Publication Date: 29.01.2004 International Filing Date: 22.07.2003
IPC:
C23C 14/02 (2006.01), C23C 16/02 (2006.01), C23C 16/56 (2006.01), C23C 14/58 (2006.01)
Applicants: WRIGHT STATE UNIVERSITY [US/US]; 3640 Colonel Glenn Highway, Dayton, OH 45435 (US) (For All Designated States Except US).
AMER, Maher S. [--/US]; (US) (For US Only).
MAGUIRE, John F. [US/US]; (US) (For US Only)
Inventors: AMER, Maher S.; (US).
MAGUIRE, John F.; (US)
Agent: LEES, Thomas E.; Killworth, Gottman, Hagen & Schaeff, L.L.P, One Dayton Centre-Suite 500, One South Main Street, Dayton, OH 45402-2023 (US)
Priority Data:
60/397,730 22.07.2002 US
Title (EN) METHOD OF REDUCING INTERNAL STRESS IN MATERIALS
(FR) PROCEDE PERMETTANT DE REDUIRE LES CONTRAINTES PROPRES DES MATERIAUX
Abstract: front page image
(EN)Methods are provided for adjusting and controlling the stress between layers of material in a multilayer structure. A first stress is configured in a region of stress on the substrate material. A second material is then deposited over the substrate. A second stress results between the substrate and the second material such that a net stress results where the net stress is a function of said first and second stresses. As such, the first stress can be configured to achieve a predetermined, desired net stress. For example, the first stress can be configured to cancel out the second stress such that the net stress is substantially zero.
(FR)La présente invention concerne des procédés qui permettent d'ajuster et maîtriser les contraintes s'exerçant entre des couches de matériaux dans une structure multicouche. Selon l'invention, on configure une première contrainte dans une région de contrainte sur le matériau substrat. On dépose alors un second matériau au-dessus du substrat. Il s'ensuit une seconde contrainte entre le substrat et le second matériau, et il se crée une contrainte nette qui est fonction de la première et de la seconde contrainte. On peut dès lors configurer la première contrainte afin d'obtenir une contrainte nette désirée prédéterminée. On peut, par exemple, configurer la première contrainte de telle manière qu'elle annule la seconde contrainte et que la contrainte nette est par conséquent sensiblement égale à zéro.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)