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Machine translation
1. (WO2004008591) DFB LASER WITH A DISTRIBUTED REFLECTOR AND PHOTONIC BAND GAP
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/008591    International Application No.:    PCT/FR2003/002063
Publication Date: 22.01.2004 International Filing Date: 04.07.2003
IPC:
H01S 5/10 (2006.01), H01S 5/12 (2006.01), H01S 5/125 (2006.01), H01S 5/22 (2006.01), H01S 5/227 (2006.01)
Applicants: ALCATEL [FR/FR]; 54, rue La Boétie, F-75008 Paris (FR) (For All Designated States Except US).
THEDREZ, Bruno [FR/FR]; (FR) (For US Only)
Inventors: THEDREZ, Bruno; (FR)
Agent: QUANTIN, Bruno; Santarelli SA, 14, avenue de la Grand Armée, B.P. 237, F-75822 Paris Cedex 17 (FR)
Priority Data:
02/08543 08.07.2002 FR
Title (EN) DFB LASER WITH A DISTRIBUTED REFLECTOR AND PHOTONIC BAND GAP
(FR) LASER DFB À RÉFLECTEUR DISTRIBUÉ À BANDE PHOTONIQUE INTERDITE
Abstract: front page image
(EN)The invention relates to a semiconductor laser consisting of an active waveguide (3) comprising an active region (4) which is surrounded by a filling material (5) and which is coupled to a distributed reflector (7, 8). Said distributed reflector (7, 8) is made from the aforementioned filling material (5) and is disposed along the length of the lateral sides of the active region (4) essentially parallel to same and in the form of a structuring having a photonic band gap along the longitudinal axis (X) of the laser. According to the invention, the structuring defines a first photonic crystal with columns (9) forming diffracting elements, said crystal comprising a mesh having dimensions of the order of the wavelength of photons in the guided mode which circulate in the active waveguide (3).
(FR)Un laser semi-conducteur comprend un guide d'onde actif (3) comportant une région active (4), entouré d'un matériau de rebouchage (5) et couplé à un réflecteur distribué (7, 8) est réalisé dans le matériau de rebouchage (5), le long des côtés latéraux de la région active (4), et sensiblement parallèlement à ceux-ci, sous la forme d'une structuration présentant une bande photonique interdite selon l'axe longitudinal (X) du laser. Cette structuration définit un premier cristal photonique de colonnes (9), constituant des éléments diffractants, ce cristal présentant une maille de dimensions de l'ordre de la longueur d'onde des photons dans le mode guidé qui circulent dans le guide d'onde actif (3).
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: French (FR)
Filing Language: French (FR)