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Machine translation
1. (WO2004008539) THIN FILM PHOTOTRANSISTOR, ACTIVE MATRIX SUBSTRATE USING THE PHOTOTRANSISTOR, AND IMAGE SCANNING DEVICE USING THE SUBSTRATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/008539    International Application No.:    PCT/JP2003/008509
Publication Date: 22.01.2004 International Filing Date: 03.07.2003
Chapter 2 Demand Filed:    31.10.2003    
IPC:
H01L 27/14 (2006.01), H01L 27/146 (2006.01), H01L 29/786 (2006.01), H01L 31/10 (2006.01), H04N 1/04 (2006.01)
Applicants: SHARP KABUSHIKI KAISHA [JP/JP]; 22-22, Nagaike-cho, Abeno-ku, Osaka-shi, Osaka 545-8522 (JP) (For All Designated States Except US).
IZUMI, Yoshihiro [JP/JP]; (JP) (For US Only)
Inventors: IZUMI, Yoshihiro; (JP)
Agent: HARA, Kenzo; HARAKENZO PATENT LAW FIRM, Daiwa Minamimorimachi Building, 2-6, Tenjinbashi 2-chome Kita, Kita-ku, Osaka-shi, Osaka 530-0041 (JP)
Priority Data:
NO. 2002-202960 11.07.2002 JP
Title (EN) THIN FILM PHOTOTRANSISTOR, ACTIVE MATRIX SUBSTRATE USING THE PHOTOTRANSISTOR, AND IMAGE SCANNING DEVICE USING THE SUBSTRATE
(FR) PHOTOTRANSISTOR A COUCHE MINCE, SUBSTRAT DE MATRICE ACTIVE UTILISANT CE PHOTOTRANSISTOR ET DISPOSITIF DE BALAYAGE D'IMAGE UTILISANT CE SUBSTRAT
Abstract: front page image
(EN) A gate insulation film (14) and a semiconductor layer (15) are laminated on a gate electrode (13); and a source electrode (17) and a drain electrode (18) are formed on the semiconductor layer (15) by having a predetermined interval between their end portions. Each of the source electrode (17) and the drain electrode (18) includes a superimposition area (17a and 18a), and at least one portion of the superimposition area (17a and 18a) has translucency. This arrangement realizes improvement of photosensitivity (Ip/Id) without causing complication of wiring layout or manufacturing process.
(FR)Une couche mince (14) d'isolation de grille et une couche de semi-conducteur (15) sont laminées sur une électrode de grille (13) et une électrode source (17) ainsi qu'une électrode de drain (18) sont créées sur la couche de semi-conducteur (15), tout en observant un intervalle prédéterminé entre leurs extrémités. Chacune de l'électrode de source (17) et de l'électrode de drain (18) comprend une zone de superposition (17a, 18a), et au moins une partie de cette zone de superposition (17a , 18a) est translucide. Ce dispositif permet d'améliorer la photosensibilité (Ip/Id) sans compliquer l'implantation du câblage ou le processus de fabrication.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)