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Machine translation
1. (WO2004008489) PROCESS FOR ULTRA-THIN BODY SOI DEVICES THAT INCORPORATE EPI SILICON TIPS AND ARTICLE MADE THEREBY
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/008489    International Application No.:    PCT/US2003/021131
Publication Date: 22.01.2004 International Filing Date: 03.07.2003
Chapter 2 Demand Filed:    30.01.2004    
IPC:
H01L 21/336 (2006.01), H01L 29/417 (2006.01), H01L 29/786 (2006.01)
Applicants: INTEL CORPORATION [US/US]; 2200 Mission College Boulevard, Santa Clara, CA 95052 (US)
Inventors: MURTHY, Anand; (US).
DOYLE, Brian; (US).
KAVALIEROS, Jack; (US).
CHAU, Robert; (US)
Agent: MALLIE, Michael, J.; Blakely Sokoloff Taylor & Zafman, 12400 Wilshire Boulevard, 7th Floor, Los Angeles, CA 90025 (US)
Priority Data:
10/194,506 12.07.2002 US
Title (EN) PROCESS FOR ULTRA-THIN BODY SOI DEVICES THAT INCORPORATE EPI SILICON TIPS AND ARTICLE MADE THEREBY
(FR) PROCEDE DE FABRICATION DE DISPOSITIFS SILICIUM SUR OXYDE ULTRA-MINCES COMPRENANT DES EXTREMITES EN SILICIUM EPITAXIAL, ARTICLE PRODUIT DE LA SORTE
Abstract: front page image
(EN)The invention relates to a transistor that includes an ultra-thin body epitaxial layer that forms an embedded junction with a channel that has a length dictated by an undercut under the gate stack for the transistor. The invention also relates to a process of forming the transistor and to a system that incorporates the transistor.
(FR)La présente invention concerne un transistor qui comprend une couche épitaxiale de corps ultra-mince qui forme une jonction intégrée avec un passage dont la longueur est déterminée par une entaille sous-jacente formée sous l'empilement de porte du transistor. Cette invention concerne également un procédé de formation du transistor et un système qui comprend ledit transistor.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)